RFUH25NS3STL ROHM

Data Sheet Super Fast Recovery Diode RFUH25NS3S Serise Dimensions(Unit : mm) Land Size Figure(Unit : mm) Super Fast Recovery Applications RFUH25 General rectification NS3S Features LPDS 1)Ultra low switching loss 2)High current overload capacity Structure ROHM : LPDS JEITA : TO263S Construction Manufacture Date Silicon epitaxial planer type Taping Dimensions(Unit : mm) Absolute Maximum Ratings(Tc=25C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage V Duty 0.5 350 V RM Reverse voltage V Direct voltage 350 V R Average rectified foward current 60Hz half sin wave , Resistive load Tc=57C 20 Io A (*1) Forward current surge peak I 100 60Hz half sin wave , Non-repetitive at Tj=25C A FSM Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) 1-3pin common circuit Electrical Characteristics(Tj=25C) Parameter Symbol Conditions Min. Typ. Max. Unit V I =20A 1.25 1.45 Forward voltage F F V V =350V Reverse current I 0.05 10 A R R I =0.5A,I =1A,Irr=0.25I Reverse recovery time trr 18 30 ns F R R Thermal resistance Rth(j-c) Junction to case 2.5 C/W ROHM COM WWW LL R IGHTS RESER ED V ,TD /(- O 2 1/4 2012.06 - Rev.A Data Sheet RFUH25NS3S 100 100000 Tj=150 C 10000 Tj=125 C Tj=150 C 10 1000 Tj=75 C Tj=125 C Tj=75 C 100 1 Tj=25 C Tj=25 C 10 0.1 1 0 500 1000 1500 2000 2500 0 50 100 150 200 250 300 350 REVERSE VOLTAGE:V (V) FORWARD VOLTAGE:V (mV) R F V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F 100 1290 I =20A V =350V F R Tj=25 C Tj=25 C 1270 1250 1230 10 1210 1190 AVE:1218mV AVE:24.5nA 1170 1150 1 I DISPERSION MAP V DISPERSION MAP R F 400 1000 f=1MHz f=1MHz 395 V =0V R 390 Tj=25 C 385 380 375 100 370 AVE:386pF 365 360 355 10 350 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.06 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT:I (A) F TERMINALS:Ct(pF) FORWARD VOLTAGE:V (mV) F CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R REVERSE CURRENT:I (nA) R TERMINALS:Ct(pF)