X-On Electronics has gained recognition as a prominent supplier of RFUH25TB3SNZC9 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RFUH25TB3SNZC9 Diodes - General Purpose, Power, Switching are a product manufactured by ROHM. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RFUH25TB3SNZC9 ROHM

RFUH25TB3SNZC9 electronic component of ROHM
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See Product Specifications
Part No.RFUH25TB3SNZC9
Manufacturer: ROHM
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SUPER FAST RECOVERY
Datasheet: RFUH25TB3SNZC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.196 ea
Line Total: USD 1.2 
Availability - 469
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
469
Ship by Thu. 05 Sep to Mon. 09 Sep
MOQ : 1
Multiples : 1
1 : USD 1.4001
10 : USD 1.088
100 : USD 0.8661
500 : USD 0.8329
1000 : USD 0.8317

   
Manufacturer
Product Category
Mounting Style
Package / Case
Series
Packaging
Part Status
Diode Type
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max If
Speed
Reverse Recovery Time Trr
Current - Reverse Leakage Vr
Capacitance Vr F
Supplier Device Package
Operating Temperature - Junction
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We are delighted to provide the RFUH25TB3SNZC9 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RFUH25TB3SNZC9 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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Super Fast Recovery Diode RFUH25TB3SNZ Datasheet Series Dimensions (Unit : mm) Structure 0.3 Standard Fast Recovery 4.5 0.1 0.3 10.0 0.1 0.2 2.8 3.20.2 0.1 Applications (1) (2) General rectification Cathode Anode Features 1.2 2.60.5 1.3 1) Ultra low switching loss 0.8 High current overload capacity 2) (1) (3) 0.1 0.75 0.05 2.45 0.5 2.45 0.5 ROHM : TO-220FN : Manufacture Date Construction Packing (Unit : mm) Silicon epitaxial planar type 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Repetitive peak reverse voltage Duty0.5 350 V RM V Direct reverse voltage 350 Reverse voltage V R 60Hz half sin wave, resistive load, T =83C Average current I c 20 A o 60Hz half sin wave,one cycle I Non-repetitive forward surge current 100 A FSM non-repetitive at T=25C j Operating junction temperature T - 150 C j Storage temperature T - 55 to 150 C stg Electrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit I =20A Forward voltage V - 1.25 1.45 V F F I V =350V Reverse current -- 10 A R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 18 30 ns F R R R Junction to case Thermal resistance -- 2.0C/W th(j-c) www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2018.03 - Rev.A 1/4 34.5 8.0 5.0 0.2 12.00.2 14.00.5 1.6 MAX 0.4 15.0 0.2Datasheet RFUH25TB3SNZ Electrical Characteristic Curves 100 1000000 T = 150 C j T = 150 C T = 125 C j j 100000 T = 125 C 10 j 10000 T = 75 C j 1000 1 T = 75 C j 100 T = 25 C j T = 25 C 0.1 j 10 T = 40 C j T = 40 C j 1 0.01 0.1 0.001 0.01 0 500 1000 1500 2000 0 50 100 150 200 250 300 350 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25C f = 1MHz j T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 1020 3040 110 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 2018.03 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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