RFUH5TF6SC9 ROHM

Super Fast Recovery Diode RFNRFUH5TF63BM6SS Data Sheet lSeries lDimensions (Unit : mm) lStructure Standard Fast Recovery Anode Cathode lApplications General rectification RFUH5 TF6S 1 2 lFeatures 1) Ultra low switching loss 2) High current overload capacity lConstruction ROHM : O220NFM Silicon epitaxial planar type 1 2 : Manufacture year : Manufacture week lPacking (Unit : mm) 7 540 lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 600 V R 60Hz half sin wave, T =90C I Average current c 5 A o resistive load, 60Hz half sin wave, one cycle, Non-repetitive forward surge current I 30 A FSM non-repetitive at T=25C j Operating junction temperature T - 150 C j T Storage temperature - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =5A Forward voltage - 2.0 2.8 V F F I V =600V Reverse current - - 10 mA R R I =0.5A, I =1A, Irr=0.25I Reverse recovery time trr - 12 25 ns F R R Thermal resistance R Junction to case - - 4.0 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/4 34.5 Data Sheet RFUH5TF6S lElectrical characteristic curves 100000 100 T = 150 C T = 125 C j j T = 150 C j 10000 T = 125 C 10 j 1000 T = 75 C j 100 1 T = 25 C j T = 75 C j 10 T = 25 C j 0.1 T = -40 C j 1 T = -40 C j 0.1 0.01 0.01 0.001 0.001 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 3000 3500 4000 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 f = 1MHz I FSM T = 25 C a 8.3ms 8.3ms 1cyc. 100 100 10 10 T = 25 C j 1 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 2/4 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM