X-On Electronics has gained recognition as a prominent supplier of RND030N20TL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RND030N20TL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RND030N20TL ROHM

RND030N20TL electronic component of ROHM
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See Product Specifications
Part No.RND030N20TL
Manufacturer: ROHM
Category: MOSFETs
Description: Trans MOSFET N-CH 200V 3A 3-Pin(2+Tab) CPT T/R
Datasheet: RND030N20TL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8974 ea
Line Total: USD 0.9 
Availability - 1231
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1231
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8974
10 : USD 0.79
100 : USD 0.5521
500 : USD 0.4747
1000 : USD 0.425
2500 : USD 0.3708
10000 : USD 0.365
25000 : USD 0.365

2405
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 73
Multiples : 1
73 : USD 0.587
100 : USD 0.5562
200 : USD 0.5546
500 : USD 0.4812
1000 : USD 0.459

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the RND030N20TL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RND030N20TL and other electronic components in the MOSFETs category and beyond.

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RND030N20 Nch 200V 3.0A Power MOSFET Datasheet Outline V 200V DSS CPT3 (SC-63) R (Max.) 870m DS(on) <SOT-428> (3) I 3.0A D (2) (1) P 20W D Features Inner circuit (3) 1) Low on-resistance. 1 * (1) Gate 2) Fast switching speed. (2) Drain (1) 3) Drive circuits can be simple. (3) Source 2 * 4) Parallel use is easy. 1 ESD PROTECTION DIODE 2 BODY DIODE 5) Pb-free lead plating RoHS compliant (2) 6) 100% Avalanche tested Packaging specifications Packaging Taping Reel size (mm) 330 Application Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking N03N20 Absolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 3.0 A c D Continuous drain current *1 T = 100C I 1.6 A c D *2 Pulsed drain current A I 6.0 D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 0.73 mJ E AS *3 Avalanche current I 1.5 A AR T = 25C P 20 W c D Power dissipation *4 P 0.85 W T = 25C D a T Junction temperature 150 C j Range of storage temperature T C 55 to 150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 1/12 Not Recommended for New DesignsData Sheet RND030N20 Thermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold Electrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - -10 T = 25C j Zero gate voltage drain current I A DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current -- 10 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.2 - 5.2 V GS (th) DS D V = 10V, I = 1.5A - 620 870 GS D Static drain - source *5 V = 10V, I = 1.5A R m GS D DS(on) on - state resistance - 1150 1610 T = 125C j g V = 10V, I = 1.5A Forward transfer admittance 0.75 1.50 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 2/12 Not Recommended for New Designs

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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