X-On Electronics has gained recognition as a prominent supplier of RPI-579N1 Optical Switches, Transmissive, Phototransistor Output across the USA, India, Europe, Australia, and various other global locations. RPI-579N1 Optical Switches, Transmissive, Phototransistor Output are a product manufactured by ROHM. We provide cost-effective solutions for Optical Switches, Transmissive, Phototransistor Output, ensuring timely deliveries around the world.

RPI-579N1 ROHM

RPI-579N1 electronic component of ROHM
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See Product Specifications
Part No.RPI-579N1
Manufacturer: ROHM
Category: Optical Switches, Transmissive, Phototransistor Output
Description: ROHM Semiconductor Optical Switches, Transmissive, Phototransistor Output PHOTOINTERRUPTER
Datasheet: RPI-579N1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 75
Multiples : 1
75 : USD 0.4384
125 : USD 0.4221
400 : USD 0.4221
1500 : USD 0.4058
5000 : USD 0.4058
N/A

Obsolete
0

Multiples : 0
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 3.314
10 : USD 0.8717
100 : USD 0.6193
500 : USD 0.5696
1000 : USD 0.4733
2000 : USD 0.4567
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Device
Slot Width
Collector- Emitter Voltage VCEO Max
Maximum Collector Current
Forward Current
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
If - Forward Current
Sensing Method
Wavelength
Brand
Power Dissipation
Fall Time
Rise Time
Factory Pack Quantity :
Height
Output Type
Number Of Channels
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vr - Reverse Voltage
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RPI-579N1 from our Optical Switches, Transmissive, Phototransistor Output category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RPI-579N1 and other electronic components in the Optical Switches, Transmissive, Phototransistor Output category and beyond.

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External dimensions (Unit : mm) RPI-579N1 Photointerrupter, General type 10 2-0.8 2.35 Absolute maximum ratings (Ta=25C) Through hole Parameter Symbol Limits Unit Applications Forward current IF 50 mA Printers Reverse voltage VR 5 V +0.05 4-0.8 Facsimiles 0 Power dissipation PD 80 mW AV equipment 8.95 Collector-emitter voltage VCEO 30 V 13.8 Emitter-collector voltage VECO 4.5 V Gap Features 0.8 5 Collector current 0.5 IC 30 mA 1) Heat resistance (170C). Collector power dissipation PC 80 mW A 2) Small gap (0.5mm) and good accuracy. Operating temperature Topr 25 to +85 C Optical 3) Quick response time. Storage temperature Tstg 40 to +85 C center 4) Filter against visible ray is built-in. Soldering temperture Tsol 260 / 3 C / s 5) Kinked forming. 1mm from the body bottom. Electrical and optical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions A Forward voltage VF 1.3 1.6 VIF=50mA (4-0.85) 4-0.4 2-0.45 Reverse current IR 10 A VR=10V (2.54) (10) Dark current ICEO 0.5 A VCE=10V Peak sensitivity wavelength P 800 nm Notes: Collector current IC 0.5 mA VCE=5V, IF=20mA 1. Unspecified tolerance 14(Bottom) VCE(sat) 0.1 0.5 V IF=20mA, IC=0.1mA shall be 0.2 . Collector-emitter saturation voltage 2. Measurement in the bracket is Rise time tr 10 s Cathode Collector Response time that of lead pin at base the mold. VCC=5V, IF=20mA, RL=100 Fall time 10 s tf 3. Dimension in parenthesis are show for reference. Cut-off frequency fC 1 MHz IF=50mA 4. Please be carefully not to receive Non-coherent Infrared light emitting diode used. 950 nm Peak light emitting wavelength P external disturbing light because VCC=5V, IC=1mA, RL=100 the top and back face emitter and Response time tr tf 10 s Anode Emitter This product is not designed to be protected against electromagnetic wave. detector element isn t covered by case. 2-0.70.1 2.350.1 6.60.1 Maximum sensitivity wavelength P 800 nm Electrical and optical characteristics curves 1000 5 50 25C 100 50 0C 4 100 25C 40 50C d 80 40 200 75C 3 tr tf 100 10 30 RL=5k VCE=30V 60 30 VCE=20V tr 50 tf VCE=10V 2 RL=2k 20 tf 1 tr 40 20 RL=1k 20 1 10 20 10 0.1 10 0 0 0 0 0312 45 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 20 50 100 200 500 1000 2000 25 0 25 50 75 100 20 0 20 40 60 80 100 0 1020304050 AMBIENT TEMPERATURE : Ta (C) DISTANCE : d (mm) FORWARD VOLTAGE : VF (V) FORWARD CURRENT : IF (mA) COLLECTOR CURRENT : Ic (A) AMBIENT TEMPERATURE : Ta (C) Fig.8 Response time vs. Fig.9 Dark current vs. ambient Fig.3 Forward current vs. forward voltage Fig.1 Relative output vs. distance ( ) Fig.2 Forward current falloff Fig.7 Collector current vs. forward current collector current temperature 160 3.0 Input VCC 140 100 100 120 IF=25mA 80 2.0 PD PC Input 100 80 20mA Output 90% 60 80 RL 60 15mA 10% 60 Output 40 1.0 40 10mA td 40 tr tf 20 20 5mA 20 td : Delay time Rise time (time for output current to rise t r : 0 0 0 0 0312 45 4020 0 20406080 100 0 248610 from 10% to 90% of peak current) 20 0 20406080 100 t f : Fall time (time for output current to fall COLLECTOR-EMITTER VOLTAGE : VCE (V) DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) from 90% to 10% of peak current) Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient Fig.4 Relative output vs. distance ( ) dissipation vs. ambient temperature temperature Fig.11 Response time measurement circuit Fig.10 Output characteristics Output ( ) photo- Input LED Infrared Transfer Output Input Photo ( ) transistor light characteristics charac- charac- transistor emitter teristics teristics RELATIVE COLLECTOR CURRENT : Ic (%) diode RELATIVE COLLECTOR CURRENT : Ic (%) d POWER DISSIPATION / COLLECTOR POWER DISSIPATION : PD / Pc (mW) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) RELATIVE COLLECTOR CURRENT : Ic (%) COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) 3.60.4 10 (1.45) 7.5 6 RESPONSE TIME : t (s) 2.5 0.70.1 5.20.1 6 5.2 2.54 1.6 DARK CURRENT : ID (nA) 2.6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer s right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies toobjectiv criteria or aninforme (by MITI clause) on the basis ofcatch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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ROHM Semicon
ROHM Semiconductor
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