X-On Electronics has gained recognition as a prominent supplier of SCS208AGHR Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SCS208AGHR Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SCS208AGHR ROHM

Name: SCS208AGHR
Brand: ROHM
SKU: SCS208AGHR_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	SCS208AGHR
Manufacturer:	ROHM
Category:	Schottky Diodes & Rectifiers
Description:	SIC SCHOTTKY DIODE, 650V, 8A, TO-220AC
Datasheet:	SCS208AGHR Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 7.4218 ea
Line Total: USD 7.42

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SCS208AGHR More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 07 Jan to Mon. 13 Jan MOQ : 1 Multiples : 1	1 : USD 7.4218 10 : USD 6.0643 100 : USD 4.5809 500 : USD 4.3118 1000 : USD 3.7508 2000 : USD 3.6432

Specifications

Manufacturer ROHM ROHM
Product Category Schottky Diodes & Rectifiers Schottky Diodes & Rectifiers
Brand ROHM ROHM
Product Range SCS20 Series SCS20 Series
Diode Configuration Single Single
Repetitive Reverse Voltage Vrrm Max 650 V 650 V
Continuous Forward Current If 8 A 8 A
Total Capacitive Charge Qc 13 nC 13 nC
Diode Case Style TO - 220AC TO - 220AC
No. Of Pins 2 Pin 2 Pin
Junction Temperature Tj Max 175 C 175 C
Automotive Qualification Standard AEC - Q101 AEC - Q101
Svhc No SVHC (15 - Jan - 2018) No SVHC (15 - Jan - 2018)
Forward Current Ifav 8 A 8 A
Forward Surge Current Ifsm Max 31 A 31 A
Forward Voltage Vf Max 1.55 V 1.55 V
Operating Temperature Max 175 C 175 C
Semiconductor Technology Sic Sic

We are delighted to provide the SCS208AGHR from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCS208AGHR and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Additional Infomation About Product

SiC Power Devices and Modules Application Note Issue of August 2014 14103EBY01 Contents 1. SiC Semiconductors .............................................................................................................................................. 3 1.1 Property of SiC material .......................................................................................................................... 3 1.2 Advantages of SiC material for power device applications......................................................... 3 2. Characteristics of SiC Schottky Barrier Diode (SBD) .............................................................................. 5 2.1 Device structure and characteristics .................................................................................................... 5 2.2 Forward characteristics of SiC-SBD ................................................................................................... 5 2.3 Reverse recovery characteristics of SiC-SBD .................................................................................. 6 3. Characteristics of SiC-MOSFET ...................................................................................................................... 8 3.1 Device structure and characteristics .................................................................................................... 8 3.2 Specific on-resistance ............................................................................................................................... 9 3.3 Vd-Id characteristics .............................................................................................................................. 10 3.4 Gate voltage Vgs to drive SiC-MOSFET and Rdson ................................................................. 10 3.5 Vg-Id characteristics .............................................................................................................................. 11 3.6 Turn-on characteristics.......................................................................................................................... 12 3.7 Turn-off characteristics ......................................................................................................................... 13 3.8 Internal gate resistance .......................................................................................................................... 14 3.9 Gate drive circuit .................................................................................................................................... 15 3.10 Forward characteristics of body diode and reverse conduction .......................................... 15 3.11 Reverse recovery characteristics of body diode ....................................................................... 17 4. Characteristics of SiC power modules ......................................................................................................... 18 4.1 Characteristics of SiC power module ............................................................................................... 18 4.2 Topologies ................................................................................................................................................. 18 4.3 Switching characteristics ...................................................................................................................... 19 4.3.1 Id and Tj dependencies of switching characteristics .......................................................... 19 4.3.2 Gate resistance dependency of switching characteristics ................................................. 20 4.3.3 Gate voltage dependency of switching characteristics ...................................................... 21 4.4 Comparison of switching loss with Si-IGBT power modules ................................................. 22 4.4.1 Comparison of total switching loss with Si-IGBT power modules ............................... 22 4.4.2 Comparison of diode reverse recovery loss (Err) with Si-IGBT power modules .... 22 4.4.3 Comparison of turn-on loss (Eon) with Si-IGBT ................................................................ 23 4.4.4 Comparison of turn-off loss (Eoff) with Si-IGBT power modules ............................... 24 5. Reliability of SiC-SBD ..................................................................................................................................... 25 5.1 dV/dt and dI/dt break-down ................................................................................................................ 25 5.2 Results of SiC-SBD reliability tests ................................................................................................. 25 6. Reliability of SiC-MOSFET ............................................................................................................................ 26 6.1 Reliability of gate insulating layer .................................................................................................... 26 1

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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