SCS210KGHR SiC Schottky Barrier Diode Data Sheet l AEC-Q101 Qualified (1) TO-220AC V 1200V R I 10A F Q 34nC C (3) (2) l l Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Tube Reel size (mm) - lConstruction Tape width (mm) - Silicon carbide epitaxial planer schottky diode Type Basic ordering unit (pcs) 50 Taping code C Marking SCS210KG lAbsolute maximum ratings (Tj = 25C) Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 1200 V RM V Reverse voltage (DC) 1200 V R 1 I Continuous forward current A F 10* 2 A 45* 3 I Surge no repetitive forward current A 190* FSM 4 A 33* 5 Repetitive peak forward current I A FRM 46* 6 Total power disspation P W 150* D Junction temperature Tj 175 C Range of storage temperature Tstg -55 to +175 C *1 Tc=146C *2 PW=8.3ms sinusoidal,Tj=25C *3 PW=10 ms square,Tj=25C *4 Pw=8.3ms sinusoidal, Tj=150C, *5 Tc=100C,Tj=150C,Duty cycle=10% *6 Tc=25C www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 1/5Data Sheet SCS210KGHR lElectrical characteristics (Tj = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. V I =0.2mA DC blocking voltage 1200 - - V DC R I =10A,Tj=25C - 1.4 1.6 V F V I =10A,Tj=150C Forward voltage - 1.8 - V F F I =10A,Tj=175C - 1.9 - V F V =1200V,Tj=25C - 10 200 mA R I V =1200V,Tj=150C Reverse current - 80 - mA R R V =1200V,Tj=175C - 130 - mA R V =1V,f=1MHz - 550 - pF R Total capacitance C V =800V,f=1MHz - 42 - pF R Total capacitive charge Qc V =800V,di/dt=500A/ms - 34 - nC R V =800V,di/dt=500A/ms Switching time tc - 15 - ns R lThermal characteristics Parameter Symbol Conditions Min. Typ. Max. Unit Thermal resistance Rth(j-c) - - 0.73 0.99 C/W www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.05 - Rev.A 2/5