X-On Electronics has gained recognition as a prominent supplier of SCS308APC9 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SCS308APC9 Schottky Diodes & Rectifiers are a product manufactured by ROHM. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SCS308APC9 ROHM

SCS308APC9 electronic component of ROHM
SCS308APC9 ROHM
SCS308APC9 Schottky Diodes & Rectifiers
SCS308APC9  Semiconductors

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See Product Specifications
Part No. SCS308APC9
Manufacturer: ROHM
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 3rd Gen SiC Schottky Br. Diode 650V 8A
Datasheet: SCS308APC9 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.7599 ea
Line Total: USD 2.76 
Availability - 652
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
652
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 1
Multiples : 1
1 : USD 2.7599
10 : USD 2.1735
30 : USD 1.8483
100 : USD 1.7368
500 : USD 1.6865
1000 : USD 1.6643

966
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 22
Multiples : 1
22 : USD 7.0834

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SCS308APC9 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCS308APC9 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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SCS308AP SiC Schottky Barrier Diode Datasheet Outline (1) TO-220ACP V 650V R I 8A F Q 21nC C (3) (2) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode 3) High-speed switching possible (2) Cathode (3) Anode 4) High surge current capability (2) (3) Packaging specifications Packaging Tube Reel size (mm) - Construction Tape width (mm) - Silicon carbide epitaxial planar type Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS308AP Absolute maximum ratings (T = 25C) j Parameter Symbol Value Unit V Reverse voltage (repetitive peak) 650 V RM Reverse voltage (DC) V 650 V R Continuous forward current (T = 135C) I 8A c F PW=10ms sinusoidal, T =25C 67 A j Surge non- PW=10ms sinusoidal, T =150C I repetitive forward 57 A j FSM current PW=10s square, T =25C 250 A j 1 * Repetitive peak forward current I 36 A FRM 2 1PW 10ms, T =25C 22 A s j 2 2 i t value i dt 2 1PW 10ms, T =150C 16 j A s 2 P * Total power disspation 57 W D T Junction temperature 175 C j Range of storage temperature T C 55 to 175 stg *1 T =100C, T =150C, Duty cycle=10% *2 T =25C c j c www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.D 1/5Datasheet SCS308AP Electrical characteristics (T = 25C) j Values Parameter Symbol Conditions Unit Min. Typ. Max. V DC blocking voltage I =50A 650 - - V DC R I =8A, T =25C - 1.35 1.50 V F j Forward voltage V I =8A, T =150C - 1.44 1.71 V F F j I =8A, T =175C -1.50 - V F j V =650V, T =25C - 0.024 40 A R j I V =650V, T =150C Reverse current - 1.6 160 A R R j V =650V, T =175C -4.8 - A R j V =1V, f=1MHz - 400 - pF R Total capacitance C V =650V, f=1MHz - 36 - pF R Total capacitive charge Q V =400V, di/dt=350A/s -21 - nC C R t V =400V, di/dt=350A/s Switching time -15 - ns C R Non-repetetive E L=1mH - 110 - mJ ava Avaranche Energy Thermal characteristics Values Parameter Symbol Conditions Unit Min. Typ. Max. R Thermal resistance --1.82.6 C/W th(j-c) Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit R C 1.89E-02 1.95E-04 th1 th1 R 1.81E-01 K/W C 8.01E-04 Ws/K th2 th2 R C 1.55E+00 1.82E-03 th3 th3 R R T th,n T th1 j c PD C C C th1 th2 th,n T a www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.D 2/5

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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