X-On Electronics has gained recognition as a prominent supplier of VMZT6.8NT2L ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. VMZT6.8NT2L ESD Suppressors / TVS Diodes are a product manufactured by ROHM. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

VMZT6.8NT2L ROHM

VMZT6.8NT2L electronic component of ROHM
VMZT6.8NT2L ROHM
VMZT6.8NT2L ESD Suppressors / TVS Diodes
VMZT6.8NT2L  Circuit Protection

Images are for reference only
See Product Specifications
Part No. VMZT6.8NT2L
Manufacturer: ROHM
Category: ESD Suppressors / TVS Diodes
Description: ROHM Semiconductor ESD Suppressors LO CAPACITANCE ZENER
Datasheet: VMZT6.8NT2L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8667
10 : USD 0.622
100 : USD 0.3881
500 : USD 0.2656
1000 : USD 0.2043
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8667
10 : USD 0.622
100 : USD 0.3881
500 : USD 0.2656
1000 : USD 0.2043
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0178
10 : USD 0.7696
100 : USD 0.1915
500 : USD 0.1313
1000 : USD 0.1053
2500 : USD 0.0902
8000 : USD 0.0832
24000 : USD 0.0792
48000 : USD 0.0752
N/A

Obsolete
0
MOQ : 365
Multiples : 1
365 : USD 0.2791
N/A

Obsolete
0
MOQ : 329
Multiples : 329
329 : USD 0.2135
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Termination Style
Cd - Diode Capacitance
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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We are delighted to provide the VMZT6.8NT2L from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VMZT6.8NT2L and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Data Sheet ESD Protection Diode VMZT6.8N lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 0.4 1 . 2 0 . 1 0 . 1 3 0 . 0 5 0 . 3 2 0 . 0 5 0.4 lFeatures (3) 0.5 1)Ultra small mold type. (VMD3) 2)Low capacitance 0.8 0 0 .1 VMD3 (1) (2) 0 .2 2 0 .0 5 0 .2 2 0 .0 5 0 . 5 0 . 0 5 lConstruction lStructure 0.4 0.4 Silicon epitaxial planer ROHM : VMD3 dot (year week factory) lTaping dimensions (Unit : mm) 0.3 0.1 1.55 0.05 4.0 0.07 2.0 0.04 0.5 0.05 0.6 0.05 1.3 0.05 2.0 0.05 0 0 lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation P 150 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =5mA 6.47 - 7.14 V z Z Reverse current I - - 0.5 A V =3.5V R R V =0V , f=1MHz Capacitance between terminals Ct - 7.0 - pF R * Zener voltage (V ) shall be measured at 40ms after loading current. Rating of per diode Z www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 1/3 0 . 8 0 . 1 1 . 2 0 . 1 0.45 1.35 0.05 0 1.75 0.07 0 0.1 5.5 0.2 3.5 0.05 0.45 8.0 0.1 1.15Data Sheet VMZT6.8N 10 1000000 Ta=150 C 100000 Ta=125 C Ta=-25 C 1 10000 1000 Ta=75 C Ta=25 C Ta=125 C 0.1 100 Ta=25 C Ta=75 C Ta=150 C 10 0.01 1 6 6.5 7 7.5 0 1 2 3 4 5 6 7 REVERSE VOLTAGE V (V) ZENER VOLTAGE:Vz(V) R V -I CHARACTERISTICS Vz-Iz CHARACTERISTICS R R 9 100 f=1MHz Ta=25 C I =5mA Z 8 n=30pcs 7 10 6 AVE:6.850V 5 1 4 0 1 2 3 4 5 6 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 200 10 Ta=25 C Ta=25 C V =3.5V f=1MHz R n=10pcs 9 V =0V R 150 n=10pcs 8 100 7 AVE:7.5pF 50 AVE:11.6nA 6 5 0 I DISPERSION MAP R Ct DISPERSION MAP www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.12 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) R TERMINALS:Ct(pF) CAPACITANCE BETWEENTERMINALS:Ct(pF) REVERSE CURRENT:I (pA) ZENER VOLTAGE:Vz( ) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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