Product Information

RU6888S-R

RU6888S-R electronic component of Ruichips

Datasheet
MOSFET N Trench 68V 88A (Tc) 4V @ 250uA 8 mΩ @ 40A,10V TO-263-2 RoHS

Manufacturer: Ruichips
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5232 ea
Line Total: USD 0.52

687 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
668 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

RU6888S-R
Ruichips

1 : USD 0.5418
10 : USD 0.4491
30 : USD 0.4089
100 : USD 0.3585
500 : USD 0.2779
800 : USD 0.2658

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The RU6888S-R with MOSFET N Trench is a 68V 88A (Tc) 4V @ 250uA 8 mO @ 40A,10V RoHS-compliant TO-263-2 surface-mount transistor manufactured by Ruichips. It is composed of a MOSFET N-Trench for ultra-low gate charge with fast switching performance. This transistor is suitable for high-current switching applications that require low on-state resistance (RDS on) and low gate charge (Qg). The device is RoHS-compliant for safe environmental operation and includes an integrated diode for Freewheel current protection. The RU6888S-R offers an extended operational temperature range from -55 °C to 150 °C, making it a reliable and robust solution for automotive, industrial, and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Shenzhen ruichips Semicon

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