X-On Electronics has gained recognition as a prominent supplier of RU6888S-R MOSFETs across the USA, India, Europe, Australia, and various other global locations. RU6888S-R MOSFETs are a product manufactured by Ruichips. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RU6888S-R Ruichips

Name: RU6888S-R
Brand: Ruichips
SKU: RU6888SR_Ruichips
Availability: InStock
Rating: 5 (11 reviews)

RU6888S-R electronic component of Ruichips

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See Product Specifications

Part No.	RU6888S-R
Manufacturer:	Ruichips
Category:	MOSFETs
Description:	MOSFET N Trench 68V 88A (Tc) 4V @ 250uA 8 mÎ© @ 40A,10V TO-263-2 RoHS
Datasheet:	RU6888S-R Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5172 ea
Line Total: USD 0.52

Availability - 7
Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

RU6888S-R More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

7

Ship by Fri. 10 Jan to Wed. 15 Jan

MOQ : 1
Multiples : 1

1 : USD 0.5172
10 : USD 0.4271
30 : USD 0.3888
100 : USD 0.341
500 : USD 0.2624
800 : USD 0.251

Specifications

Manufacturer

Ruichips Ruichips

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

TO - 263 - 2 TO - 263 - 2

Brand Category

Ruichips Ruichips

Fet Type

n trench n trench

Drain To Source Voltagevdss

68 V 68 V

Continuous Drain Current Id @ 25°C

88 A (t C) 88 A (t C)

Vgsth Max @ Id

4v @ 250ua 4v @ 250ua

Rds On Max @ Id Vgs

8 m @ 40a,10v 8 m @ 40a,10v

Power Dissipation-Max Ta

120 W 120 W

Drain Source Voltage Vdss

68 V 68 V

Continuous Drain Current Id

88 A 88 A

Power Dissipation Pd

120 W 120 W

Drain Source On Resistance Rdson@Vgs Id

8 mOhms @10V , 40A 8 mOhms @10V , 40A

Gate Threshold Voltage Vgsth@Id

4 V @250uA 4 V @250uA

Type

N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

RU6888S-R Alternative Parts

We are delighted to provide the RU6888S-R from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RU6888S-R and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The RU6888S-R with MOSFET N Trench is a 68V 88A (Tc) 4V @ 250uA 8 mO @ 40A,10V RoHS-compliant TO-263-2 surface-mount transistor manufactured by Ruichips. It is composed of a MOSFET N-Trench for ultra-low gate charge with fast switching performance. This transistor is suitable for high-current switching applications that require low on-state resistance (RDS on) and low gate charge (Qg). The device is RoHS-compliant for safe environmental operation and includes an integrated diode for Freewheel current protection. The RU6888S-R offers an extended operational temperature range from -55 °C to 150 °C, making it a reliable and robust solution for automotive, industrial, and consumer applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
7 Ship by Fri. 10 Jan to Wed. 15 Jan MOQ : 1 Multiples : 1	1 : USD 0.5172 10 : USD 0.4271 30 : USD 0.3888 100 : USD 0.341 500 : USD 0.2624 800 : USD 0.251

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