X-On Electronics has gained recognition as a prominent supplier of K4Z80325BC-HC14 DRAM across the USA, India, Europe, Australia, and various other global locations. K4Z80325BC-HC14 DRAM are a product manufactured by SAMSUNG. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

K4Z80325BC-HC14 SAMSUNG

K4Z80325BC-HC14 electronic component of SAMSUNG
Images are for reference only
See Product Specifications
Part No.K4Z80325BC-HC14
Manufacturer: SAMSUNG
Category: DRAM
Description: FBGA-180 DDR SDRAM ROHS
Datasheet: K4Z80325BC-HC14 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.2773 ea
Line Total: USD 9.28

Availability - 775
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
775
Ship by Tue. 13 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 9.5471
10 : USD 8.9376
30 : USD 7.8856
100 : USD 6.9668

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the K4Z80325BC-HC14 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K4Z80325BC-HC14 and other electronic components in the DRAM category and beyond.

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The K4Z80325BC-HC14 manufactured by SAMSUNG is a phase-change random access memory (PRAM) chip, which has an FBGA-180 DDR SDRAM interface and is RoHS compliant. This chip is capable of operating at 400 MHz with dual operating modes, allowing it to be used as both a write-through and write-back device. The PRAM architecture of the K4Z80325BC-HC14 eliminates the need for an external prefetcher and incorporates an on-chip error detection and correction unit, while boasting a fast read performance in excess of 1.3 GB/s. Its high-density design enables the integration of up to 512 MB of memory, offering a cost-effective, high-capacity embedded memory solution. This chip operates with a wide -0.2 to 4.2V operation voltage range and is ideal for applications that require power efficient, reliable, and high-performance memory access.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP

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