X-On Electronics has gained recognition as a prominent supplier of DFA150AA160 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DFA150AA160 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

DFA150AA160 Sanrex

DFA150AA160 electronic component of Sanrex
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Part No.DFA150AA160
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 150A Bridge Rectifiers
Datasheet: DFA150AA160 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 129.5935
10 : USD 121.21
N/A

   
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Vf - Forward Voltage
Vr - Reverse Voltage
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We are delighted to provide the DFA150AA160 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DFA150AA160 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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THREE PHASE DIODETHYRISTOR DFA150AA80/160 UL E76102 M SanRex Power Module, DFA150AA, is complex isolated module which is designed for rash current circuit. It contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line. This Module is designed very compactly. Because diode module and thyristor put together. This Module is also isolated type between electorode terminal and mounting base. So you can put this Module and other one together in a same fin. Application Inverter for AC or DC motor control, Current stabilized power supply, Switching power supply. Unit DIODE Maximum Ratings Ratings Symbol Item Unit DFA150AA80 DFA150AA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions Ratings Unit ID Output Current (D.C.) Three phase full wave, Tc 93 150 A IFSM Surge forward current cycle, 50/60HZ, peak value, non-repetitive 1460/1600 A Tj Operating Junction Temperature 40 to 150 Tstg Storage Temperature 40 to 125 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting Nm Terminal M6 Recommended Value 2.5-3.9 25-40 4.7 48 Torque kgf B Terminal M4 Recommended Value 1.0-1.4 10-14 1.5 15 Mass Typical Value 460 g Electrical Characteristics Symbol Item Conditions Ratings Unit IRRM Repetitive Peak Reverse Current,max. Tj 150 VR=VRRM 15 mA VFM Forward Voltage Drop,max. IF 150A Inst. measurement 1.35 V Rth j-c Thermal Impedance, max. Junction to Case TOTAL 0.14 /W Rth c-f Thermal Impedance, max. Case to fin 0.07 /W DFA150AA80/160 THYRISTOR Maximum Ratings Ratings Symbol Item Unit DFA150AA80 DFA150AA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak off-State Voltage 800 1600 V Symbol Item Conditions Ratings Unit IT AV Average On-State Current 150 A Singl phase half wave. 180 conduction, Tc 93 TSM I Surge On-State Current cycle, 50/60HZ, peak value, non-repetitive 1460/1600 A 2 2 2 I t I t for fusing 10670 A S 1 di dt Critical Rate of Rise of On-State Current IG 100mA VD VDRM diG/dt 0.1A/ s 150 A/ s 2 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature 40 to 135 Tstg Storage Temperature 40 to 125 Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting Nm Terminal M6 Recommended Value 2.5-3.9 25-40 4.7 48 Torque fB Terminal M4 Recommended Value 1.0-1.4 10-14 1.5 15 Mass Typical Value 460 g Electrical Characteristics Symbol Item Conditions Ratings Unit IDRM Repetitive Peak Off-State Current,max. D DRM 100 mA Tj 135 V V RRM I Repetitive Peak Reverse Current,max. Tj 135 VD VRRM 100 mA TM V Peak On-State Voltage,max. Tj 25 ITM 150A Inst. measurement 1.35 V IGT Gate Trigger Current,max. Tj 25 VD 6V IT 1A 70 mA VGT Gate Trigger Voltage,max. Tj 25 VD 6V IT 1A 3 V Critical Rate of Rise of Off- 2 dv dt Tj 125 VD VDRM 500 V/ s 3 State Voltage,min. Thermal Impedance, max. Junction to Case 0.21 Rth j-c /W Rth c-f Thermal Impedance, max. Case to fin 0.07 /W

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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