THREE PHASE DIODETHYRISTOR DFA200AA80/160 UL E76102 M SanRex Power Module, DFA200AA, is complex isolated module which is designed for rash current circuit. It contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line. This Module is designed very compactly. Because diode module and thyristor put together. This Module is also isolated type between electorode terminal and mounting base. So you can put this Module and other one together in a same fin. Application Inverter for AC or DC motor control, Current stabilized power supply, Switching power supply. Unit DIODE Mximum Ratings Ratings Symbol Item Unit DFA200AA80 DFA200AA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions Ratings Unit ID Output Current (D.C.) Three phase full wave, Tc 96 200 A IFSM Surge forward current cycle, 50/60HZ, peak value, non-repetitive 1850/2000 kA Tj Operating Junction Temperature 30 to 150 Tstg Storage Temperature 30 to 135 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting Nm Terminal M6 Recommended Value 2.5-3.9 25-40 4.7 48 Torque fB Terminal M4 Recommended Value 1.0-1.4 10-14 1.5 15 Mass Typical Value 460 g Electrical Characteristics Symbol Item Conditions Ratings Unit IRRM Repetitive Peak Reverse Current,max. Tj 150 , VR=VRRM 20 mA VFM Forward Voltage Drop,max. IF 200A Inst. measurement 1.35 V Rth j-c Thermal Impedance, max. Junction to Case TOTAL 0.10 /W DFA200AA80/160 THYRISTOR Maximum Ratings Ratings Symbol Item Unit DFA200AA80 DFA200AA160 VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak Off-State Voltage 800 1600 V Symbol Item Conditions Ratings Unit IT AV Average On-State Current 200 A Singl phase half wave. 180 conduction, Tc 93 1 TSM I Surge On-State Current cycle, 50/60HZ, peak value, non-repetitive 1850/2000 A 2 2 2 2 I t I t (for fusing) Value for one of surge current 17000 A S 1 di dt Critical Rate of Rise of On-State Current IG 100mA VD VDRM diG/dt 0.1A/ s 200 A/ s 2 VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature Tj 125 135 30 to 135 Tstg Storage Temperature 30 to 135 Mounting M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mounting Nm Terminal M6 Recommended Value 2.5-3.9 15-25 4.7 48 Torque fB Terminal M4 Recommended Value 1.0-1.4 15-25 1.5 15 Mass Typical Value 460 g Electrical Characteristics Symbol Item Conditions Ratings Unit IDRM Repetitive Peak off-State Current,max. D DRM 50 mA Tj 135 V V IRRM Repetitive Peak Reverse Current,max. D DRM 50 mA Tj 135 V V TM V Peak on-State Voltagea,max. IT 200A Inst. measurement 1.15 V GT I Gate Trigger Current,max. VD 6V IT 1A 100 mA VGT Gate Trigger Voltage,max. VD 6V IT 1A 3 V 2 dv dt Critical Rate of off-State Voltaget,min. Tj 125 VD VDRM 500 V/ s 3 Thermal Impedance, max. Junction to Case 0.18 Rth j-c /W