X-On Electronics has gained recognition as a prominent supplier of FCA100AC120 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. FCA100AC120 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

FCA100AC120 Sanrex

FCA100AC120 electronic component of Sanrex
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See Product Specifications
Part No.FCA100AC120
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2in1 1200V SiC FET 100A 6.8mOhm 20Vgs
Datasheet: FCA100AC120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 809.4434 ea
Line Total: USD 809.44

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 16 Aug to Tue. 20 Aug
MOQ : 1
Multiples : 1
1 : USD 752.7783
5 : USD 726.8533

   
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Vgs - Gate-Source Voltage
Mounting Style
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We are delighted to provide the FCA100AC120 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCA100AC120 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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SiC MOSFET Module FCA100AC120 FCA100AC120 2in1 SiC MOSFET module Isolated module Integrated FWD function Features Small size package High reliability Safe gate driving Short circuit tolerance Low power loss Low temperature dependency of RDS(on) Unnecessity of additional FWD Applications Industrial inverters / DC-DC converters / EV chargers / Resonant power supply Unitmm Maximum Ratings (Tj=25 unless otherwise specified) Item Symbol Unit Ratings Conditions Drain-Source Voltage V V 1200 DSS Gate-Source Voltage(+) V 22 V GSS Gate-Source Voltage(-) V -7 Continuous Drain Current I A 100 V =20V, Tc=90 D GS Continuous Source Current I A 100 V =-5V, Tc=90 S GS Total Power Dissipation P W 625 T =25 tot C Operating Junction Temperature T -40 to +150 j Storage Temperature T -40 to +125 stg Isolation Voltage (RMS) V V 2500 AC 60Hz minute iso Mounting M5 2.7 Recommended Value 1.5 to 2.5 Mounting torque Terminal M5 2.7 Recommended Value 1.5 to 2.5 Mass 130 Typical value Electrical Characteristics (Tj=25 unless otherwise specified) Ratings Item Symbol Unit Conditions Min. Typ. Max. Drain-Source Breakdown Voltage V V 1200 V =0V, I =200A (BR)DSS GS D 0.68 1.40 V =20V, I =100A GS D Static Drain-Source On-State Voltage V V DS(on) 0.74 1.50 V =20V, I =100A, T =150 GS D j 6.8 14.0 V =20V, I =100A GS D On-State Resistance R m DS(on) 7.4 15.0 V =20V, I =100A,T=150 GS D j Drain Cutoff Current I A 200 V =1200V, V =0V DSS DS GS Gate-Source Threshold Voltage V V 3 4 5 V =10V, I =3mA GS(th) DS D Gate-Source Leakage Current I nA 200 V =20V, V =0V GSS GS DS t ns 58 d(on) t ns 33 I =100A, V =600V, V =+20V/-5V, r D DS GS Switching Characteristics R =3.3, L=126H t ns 121 G d(off) t ns 49 f Input Capacitance C nF 17.2 iss Output Capacitance C nF 5.0 V =20V, V =0V, f=100kHz oss DS GS Reverse Transfer Capacitance C nF 0.6 rss 2.60 2.90 V =-5V, I =100A GS S Source-Drain Voltage V V SD 2.62 2.95 V =-5V, I =100A, T =150 GS S j Diode Total Capacitive Charge Q nC 2300 I =100A, V =600V, di /dt=2400A/s, V =-5V c SD DS SD GSFCA100AC120 hermal Characteristics=25 unless otherwise specified Ratings Item Symbol Unit Conditions Min. Typ. Max. Thermal Resistance R /W 0.2 Junction to case (Per Leg) th(j-c) Case to Heat sink (Per Module) Thermal conductivity (Silicone grease) Interface Thermal Resistance R /W 0.06 th(c-f) -3 = 910 W/cm

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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