X-On Electronics has gained recognition as a prominent supplier of FCA150AC120 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. FCA150AC120 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

FCA150AC120 Sanrex

FCA150AC120 electronic component of Sanrex
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Part No.FCA150AC120
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2in1 1200V SiC FET 150A 4.1mOhm 20Vgs
Datasheet: FCA150AC120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 924.365 ea
Line Total: USD 924.36 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 924.365
5 : USD 892.5288

   
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Vgs - Gate-Source Voltage
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We are delighted to provide the FCA150AC120 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCA150AC120 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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SiC MOSFET Module FCA150AC120 FCA150AC120 2in1 SiC MOSFET module Isolated module Integrated FWD function Features Small size package High reliability Safe gate driving Short circuit tolerance Low power loss Low temperature dependency of RDS(on) Unnecessity of additional FWD Applications Industrial inverters / DC-DC converters / EV chargers / Resonant power supply Unitmm Maximum Ratings (Tj=25 unless otherwise specified) Item Symbol Unit Ratings Conditions Drain-Source Voltage V V 1200 DSS Gate-Source Voltage(+) V 22 V GSS Gate-Source Voltage(-) V -7 Continuous Drain Current I A 150 V =20V, Tc=90 D GS Continuous Source Current I A 150 V =-5V, Tc=90 S GS Total Power Dissipation P W 1135 T =25 tot C Operating Junction Temperature T -40 to +150 j Storage Temperature T -40 to +125 stg Isolation Voltage (RMS) V V 2500 AC 60Hz minute iso Mounting M5 2.7 Recommended Value 1.5 to 2.5 Mounting torque Terminal M5 2.7 Recommended Value 1.5 to 2.5 Mass - g 130 Typical value Electrical Characteristics (Tj=25 unless otherwise specified) Ratings Item Symbol Unit Conditions Min. Typ. Max. Drain-Source Breakdown Voltage V V 1200 V =0V, I =300A (BR)DSS GS D 0.61 1.40 V =20V, I =150A GS D Static Drain-Source On-State Voltage V V DS(on) 0.67 1.50 V =20V, I =150A, T =150 GS D j 4.1 9.3 V =20V, I =150A GS D On-State Resistance R m DS(on) 4.5 10.0 V =20V, I =150A,T=150 GS D j Drain Cutoff Current I A 300 V =1200V, V =0V DSS DS GS Gate-Source Threshold Voltage V V 3 4 5 V =10V, I =4.5mA GS(th) DS D Gate-Source Leakage Current I nA 300 V =20V, V =0V GSS GS DS t ns 66 d(on) t ns 36 r I =150A, V =600V, V =+20V/-5V, D DS GS Switching Characteristics R =2.2, L=126H t ns 114 G d(off) t ns 50 f Input Capacitance C nF 25.3 iss Output Capacitance C nF 7.4 V =20V, V =0V, f=100kHz oss DS GS Reverse Transfer Capacitance C nF 1.1 rss 2.68 2.90 V =-5V, I =150A GS S Source-Drain Voltage V V SD 2.63 2.95 V =-5V, I =150A, T =150 GS S j Diode Total Capacitive Charge Q nC 4000 I =150A, V =600V, di /dt=3200A/s, V =-5V c SD DS SD GSFCA150AC120 hermal Characteristics=25 unless otherwise specified Ratings Item Symbol Unit Conditions Min. Typ. Max. Thermal Resistance R /W 0.11 Junction to case (Per Leg) th(j-c) Case to Heat sink (Per Module) Thermal conductivity (Silicone grease) Interface Thermal Resistance R /W 0.06 th(c-f) -3 = 910 W/cm

Tariff Desc

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