THYRISTOR MODULE SCE110AB160 UL E76102M SCE110AB Featur es & Advantages Power cycle capabilityL ong-term reliability is improved more than three times due to adopting a transfer mold packagA. t T j1 00 3 Tj 100 di/dt resistance is improved due to adopting di/dt a unique gate structure T hyristor . Compared with our existing product. Tj=150 Both Diode and Thyristor can operate at high temperatures of Tj=150 14 14mm height, isolated low prole package 1/2 Compact space saving design 110A V olume comparison is 50% smaller than I ntoeurr exinstainl gC poronducgtR.u artaintigo 1ns1 0A Applications Inverter, Servo Controller, Electrical Regulator, Various Rectiers, Power surplies, Inrush Current Unit mm Prevention Circuit, Power Factor Improvement Equipment Maximum Ratings Unless otherwise specied Tj25T j25 Ratings Symbol Item Unit SCE110AB160 *Repetitive Peak Reverse Voltage VRRM 1600 V *Non-Repetitive Peak Reverse Voltage VRSM 1700 V Repetitive Peak Off-state Voltage VDRM 1600 V Symbol Item Conditions Ratings Unit ITA V *Average On-state Current Single phase, half wave, 180 Tc89 110 A IFA V 1 80 , ITR MS *R.M.S. On-state Current Single phase, half wave, 180 Tc8 9 172 A IFRMS 1 80 , ITSM cycle, 50/60Hz, Peak value, non-repetitive *Surge On-state Current 2100/2300 A IFSM 50/60Hz 2 *I t Value for one cycle surge current 2 2 I t 22000 A s 1 Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGA V 1 W Peak Gate Current IFGM 3 A Peak Gate VoltageF orwar d VFGM 10 V Peak Gate VoltageR everse VRGM 5 V Critical Rate of Rise of On-state Current di/dt 700 A/s *Isolation Breakdown VoltageR.M.S. A.C. 1minute VISO 3000 V A.C. *Operating Junction Temperature Tj 401 50 Tstg *Storage Temperature 4 0150 Recommended value MountM5 1.52 .51 525 2.728 Mounting Torque Nm Recommended value kgfcm TerminalM 5 1.52 .5152 5 2.728 Mass Typical value 75 gSCE110AB160 Electrical Characteristics Unless otherwise specied Tj25Tj2 5 Ratings Symbol Item Conditions Unit Min. Typ. Max. Repetitive Peak Off-state Current at VDRM, Single phase, half wave IDRM , Tj1 50 70 mA , *Repetitive Peak Reverse Current at VRRM, Single phase, half wave IRRM , Tj1 50 70 mA , VTM On-state Current 300A Inst. measurement *Peak On-state Voltage 2 V VFM 3 00A Tj25 1.16 *Threshold Voltage VTTO V Tj150 0.9 Tj25 2.8 *Dynamic Resistance rt m Tj150 3.7 Gate Trigger Current IGT IT1A, V D6V 150 mA Gate Trigger Voltage VGT IT1A, V D6 V 3.2 V Non-Trigger Gate Voltage VGD Tj150, V DV DRM 0.25 V Holding Current IH 150 mA Latching Current IL 300 mA Critical Rate of Rise of Off-state Voltage Exponential wave dv/dt Tj150, V DV DRM, 1000 V/s Junction to casep er Chip Rthj-c 0.28 /W p er Chip *Thermal Impedance case to np er Chip Rthc-f 0.2 /W p er Chip *mark: Thyristor and Diode part. no mark: Thyristor part.