X-On Electronics has gained recognition as a prominent supplier of SCE160DA160 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. SCE160DA160 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

SCE160DA160 Sanrex

SCE160DA160 electronic component of Sanrex
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Part No.SCE160DA160
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 160A
Datasheet: SCE160DA160 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 93.137 ea
Line Total: USD 93.14 
Availability - 25
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
25
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 93.137
10 : USD 85.03
25 : USD 81.125
50 : USD 79.332
100 : USD 76.923
250 : USD 74.382

   
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We are delighted to provide the SCE160DA160 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCE160DA160 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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THYRISTOR MODULE SCASCE160DA UL E76102M SCASCE160DA Features and Advantages New and unique gate design for higher di/dv (Integrated di/dt Thyristor. 2.5 times higher than existing products) 2.5 Newly designed and less-layered internal structure for improved heat dissipation (low thermal resistance) In addition to reduced layer design, soldering on both 2 sides of chips increased the long-term reliability (2 times longer than existing products) ULU L File E 76102 UL recognized under UL File E 76102 EU RoHS compliant R oHS Applications Motor drives Servo controller Power controller UPS UPS Soft starter Unit mm Power supplies Circuit Diagram SCA SCE Maximum Ratings Tj25 unless otherwise speciedTj25 Ratings Symbol Item Unit SCA160DA80 SCA160DA160 SCE160DA80 SCE160DA160 *Repetitive Peak Reverse Voltage VRRM 800 1600 V *Non-Repetitive Peak Reverse Voltage VRSM 960 1700 V Repetitive Peak Off-state Voltage VDRM 800 1600 V Symbol Item Conditions Ratings Unit ITAV *Average On-state Forward Current Single phase, half wave, 180 conduction, Tc88 160 A IFAV 180 ITRMS *R.M.S. On-state Forward Current Single phase, half wave, 180 conduction, Tc88 251 A IFRMS 180 ITSM *Surge On-state Forward Current cycle, 50/60Hz, Peak value, non-repetitive 5400/5900 A 50/60Hz IFSM 2 *I t Value for one cycle surge current 2 2 I t 145000 A s Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGAV 3 W Peak Gate Current IFGM 3 A Peak Gate Voltage Forward VFGM 10 V Peak Gate Voltage Reverse VRGM 5 V Critical Rate of Rise of On-state Current di/dt IG100mA, VDVDRM, dIG/dt0.1A/s 500 A/s *Isolation Breakdown Voltage A.C. 1minute VISO 2500 V A.C. *Operating Junction Temperature Tj 40125 *Storage Temperature Tstg 40125 Recommended value Mount M6 2.53.9Nm 4.7 Mounting Torque Nm Recommended value Terminal M6 2.53.9Nm 4.7 Mass Typical value 210 g SCA160AA-S75-1303( ) SCASCE160DA Electrical Characteristics Tj25 unless otherwise speciedTj25 Ratings Symbol Item Conditions Unit min. typ. max. Repetitive Peak Off-state Current IDRM Tj125, VDVDRM 100 mA *Repetitive Peak Reverse Current IRRM Tj125, VRVRRM 100 mA VTM *On-state Forward Voltage IT500A 1.4 V VFM Tj25 1.07 *Threshold Voltage VTTO V Tj125 0.87 Tj25 1.50 *Dynamic Resistance rt m Tj125 0.96 Gate Trigger Current IGT VD6V, IT1A 100 mA Gate Trigger Voltage VGT VD6V, IT1A 3 V Gate Non-Trigger Voltage VGD Tj125, VDVDRM 0.25 V Turn-on Time tgt IT160A, IG100mA, VDVDRM, dIG/dt0.1A/s 10 s Critical Rate of Rise of Off-state Voltage dv/dt Tj125, VDVDRM, exp. waveform 1000 V/s Holding Current IH 140 mA Latching Current IL 230 mA Junction to case *Thermal Resistance cont., , per one element Rthj-c 0.17 /W cont., sin.180, Junction to case, per one element 0.18 , sin.180, *Effective Thermal Resistance Rthj-c /W rec.120, Junction to case, per one element 0.19 , rec.120, Case to Heat sink, per one element , *Interface Thermal Resistance Rthc-s 0.1 /W 3 Thermal conductivity Silicon grease710 W/ 3 710 W/ *mark: Thyristor and Diode part. No mark: Thyristor part.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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