THYRISTOR MODULE SCASCE90AA UL E76102M SCA SCE 90AA Advantages Isolated package IT(AV) 90A 90A di/dt 140A/s 140A/s dv/dt 1000V/s 1000V/s Applications various rectifiers, Motor drives, Heater controls, Static switches Internal Congurations Unit mm Maximum Ratings Unless otherwise specied Tj25Tj25 Ratings Symbol Item Unit SCA90AA160 SCE90AA160 *Repetitive Peak Reverse Voltage VRRM 1600 V *Non-Repetitive Peak Reverse Voltage VRSM 1700 V Repetitive Peak Off-state Voltage VDRM 1600 V Symbol Item Conditions Ratings Unit ITAV *Average On-state Current Single phase, half wave, 180 conduction, Tc100 90 A IFAV 180 ITRMS *R.M.S. On-state Current Single phase, half wave, 180 conduction, Tc100 140 A IFRMS 180 ITSM *Surge On-state Current cycle, 50/60Hz, Peak value, non-repetitive 2100/2300 A IFSM 50/60Hz 2 *I tfor fusing Value for one cycle surge current 2 2 I t 22040 A s 1 Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGAV 1 W Peak Gate Current IFGM 3 A Peak Gate Voltage Forward VFGM 10 V Peak Gate Voltage Reverse VRGM 5 V Critical Rate of Rise of On-state Current di/dt IG100mA, VDVDRM, dIG/dt0.1A/s 140 A/s *Isolation Breakdown VoltageR. M. S. A.C. 1minute VISO 2500 V A.C. *Operating Junction Temperature Tj 40130 Tstg *Storage Temperature 40125 Recommended value MountingM5 1.52.51525 2.728 Mounting Torque Nm Recommended value kgfcm TerminalM5 1.52.51525 2.728 Mass Typical value 90 g SCA90AA-S79-1303( ) SCA SCE 90AA Electrical Characteristics Unless otherwise specied Tj25Tj25 Ratings Symbol Item Conditions Unit Min. Typ. Max. Repetitive Peak Off-state Current, max at VDRM, Single phase, half wave IDRM , Tj130 20 mA , *Repetitive Peak Reverse Current, max at VRRM, Single phase, half wave IRRM , Tj130 20 mA , VTM *Peak On-state Forward Voltage, max On-State Current 270A, Inst, measurement 1.7 V 270A VFM Tj25 1.09 *Threshold Voltage, max VTTO V Tj130 0.91 Tj25 2.3 *Dynamic Resistance, max rt m Tj130 3.2 Gate Trigger Current, max IGT IT1A, VD6V 100 mA Gate Trigger Voltage, max VGT IT1A, VD6V 2.5 V Non-Trigger Gate Voltage, min VGD Tj130, VDVDRM 0.25 V Turn-on Time tgt IT90A, IG100mA, VDVDRM, dIG/dt0.1A/s 10 s Critical Rate of Rise of Off-state Voltage, min Exponential wave dv/dt Tj130, VDVDRM, 1000 V/s Holding Current IH 160 mA Latching Current IL 280 mA Junction to case per Chip Rthj-c 0.2 /W per Chip *Thermal Impedance, max case to n per Chip Rthc-s 0.22 /W per Chip *mark: Thyristor and Diode part, No mark: Thyristor part.