Ordering number : ENA1057 2SJ683 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 2SJ683 Applications Features Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --65 A D Drain Current (Pulse) I PW10 s, duty cycle 1% --260 A DP Allowable Power Dissipation P Tc=25C50W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 E 400 mJ AS Avalanche Current *2 I --65 A AV Note : *1 V =--30V, L=100 H, I =--65A DD AV *2 L 100H, Single pulse Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V = 16V, V =0V 10 A GSS GS DS Marking : J683 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30508QA TI IM TC-00001244 No. A1057-1/42SJ683 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--33A 39 65 S DS D R (on)1 I =--33A, V =--10V 8.0 10.5 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--33A, V =--4V 10.5 15 m DS D GS Input Capacitance Ciss V =--20V, f=1MHz 15500 pF DS Output Capacitance Coss V =--20V, f=1MHz 1000 pF DS Reverse Transfer Capacitance Crss V =--20V, f=1MHz 800 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 110 ns d Rise Time t See specified Test Circuit. 620 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 900 ns d Fall Time t See specified Test Circuit. 580 ns f Total Gate Charge Qg V =--30V, V =--10V, I =--65A 290 nC DS GS D Gate-to-Source Charge Qgs V =--30V, V =--10V, I =--65A 50 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--30V, V =--10V, I =--65A 50 nC DS GS D Diode Forward Voltage V I =--65A, V =0V --0.9 --1.5 V SD S GS Package Dimensions unit : mm (typ) 7002-001 8.2 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 1 : Gate 7.8 10.0 2 : Source 6.0 3 : Drain SANYO : ZP Switching Time Test Circuit Avalanche Resistance Test Circuit V V = --30V DD IN L 50 0V RG --10V I = --33A D V IN R =0.9 L 2SJ683 D V OUT 0V PW=10s V 50 DD --10V D.C.1% G 2SJ683 P.G 50 S No. A1057-2/4 2.5 0.4 4.2 0.2 1.2 8.4 6.2 10.0 5.2 0.7