Ordering number : ENA0732 FSS275 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device FSS275 Applications Features Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 6A D Drain Current (PW10s) I Duty cycle1% 6.5 A D Drain Current (PW10s) I Duty cycle1% 24 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (2000mm0.8mm), PW10s 1.9 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =3A 3.4 5.8 S DS D R (on)1 I =3A, V =10V 33 43 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =3A, V =4V 44 62 m DS D GS Marking : S275 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 32207PA TI IM TC-00000366 No. A0732-1/4FSS275 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =20V, f=1MHz 1100 pF DS Output Capacitance Coss V =20V, f=1MHz 110 pF DS Reverse Transfer Capacitance Crss V =20V, f=1MHz 70 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 16 ns d Rise Time t See specified Test Circuit. 27 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 90 ns d Fall Time t See specified Test Circuit. 50 ns f Total Gate Charge Qg V =30V, V =10V, I =6A 21 nC DS GS D Gate-to-Source Charge Qgs V =30V, V =10V, I =6A 3.1 nC DS GS D Gate-to-Drain Miller Charge Qgd V =30V, V =10V, I =6A 3.7 nC DS GS D Diode Forward Voltage V I =6A, V =0V 0.82 1.2 V SD S GS Package Dimensions Switching Time Test Circuit unit : mm (typ) 7005-002 V =30V DD V IN 8 5 I =3A D 10V R =10 0V L V V IN D OUT PW=10s D.C.1% G 1 : Source 14 P.G 2 : Source 50 0.43 0.2 FSS275 3 : Source S 4 : Gate 5 : Drain 5.0 6 : Drain 7 : Drain 8 : Drain 1.27 0.595 SANYO : SOP8 I -- V I -- V D DS D GS 6 9 V =10V DS 8 5 7 4 6 5 3 4 2 3 2 1 1 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain-to-Source Voltage, V -- V IT12181 Gate-to-Source Voltage, V -- V IT12182 DS GS No. A0732-2/4 V =3.0V GS 3.3V 3.5V 25C 6.0V 4.0V 5.0V 8.0V --25C 10.0V 16.0V Ta=75C Drain Current, I -- A D 0.1 1.5 1.8 MAX 4.4 0.3 6.0 Drain Current, I -- A D