PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 MARCH 94 FEATURES * 100 Volt V CEO * Gain of 20 at I = 0.5 Amp C *P =1 Watt tot C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT Collector-Base Voltage V -60 -80 -100 V CBO Collector-Emitter Voltage V -60 -80 -100 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation at T = 25C P 1W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL 2N6728 2N6729 2N6730 UNIT CONDITIONS. MIN. MAX MIN. MAX MIN. MAX Collector-Base V -60 -80 -100 V I =-0.1mA, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -60 -80 -100 V I =-1mA, I =0* (BR)CEO C B Breakdown Voltage Emitter-Base V -5 -5 -5 V I =-1mA, I =0 (BR)EBO E C Breakdown Voltage Collector Cut-Off I -1 A V =-60V, I =0 CBO CB E Current -1 A V =-80V, I =0 CB E -1 V =-100V, I =0 A CB E Emitter Cut-Off I -1 -1 -1 V =-5V, I =0 A EBO EB C Current Collector-Emitter V -0.5 -0.5 -0.5VI =-250mA,I =-10mA* CE(sat) C B Saturation Voltage -0.35 -0.35 -0.35 I =-250mA,I =-25mA* C B Base-Emitter V -1.2 -1.2 -1.2 V IC=-250mA, V =-1V* BE(on) CE Turn-On Voltage Static Forward h 80 80 80 I =-50mA, V =-1V* FE C CE Current Transfer 50 250 50 250 50 250 I =-250mA, V =-1V* C CE Ratio 20 20 20 I =-500mA, V =-1V* C CE Transition f 50 500 50 500 50 500 MHz I =-50mA, V =-10V T C CE Frequency Collector Base C 30 30 30 pF V =-10V, f=1MHz CB CE Capacitance 3-9