SKiM601MLI07E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V 650 V CES I T =25C 438 A C s T = 175 C j T =70C 345 A s I 600 A Cnom I I = 2xI 1200 A CRM CRM Cnom V -20 ... 20 V GES V = 360 V CC SKiM 4 t V 15 V T =150 C 6s psc GE j V 650 V CES T -40 ... 175 C j IGBT Modules Inverse diode I T =25C 357 A F s T = 175 C j SKiM601MLI07E4 T =70C 275 A s I 600 A Fnom I I = 2xI 1200 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 3240 A FSM p j IGBT 4 Trench Gate Technology T -40 ... 175 C j Solder technology Clamping diode V with positive temperature CE(sat) coefficient I T =25C 334 A s F T = 175 C j Low inductance case T =70C 256 A s Isolated by Al O DCB (Direct Copper 2 3 I 400 A Fnom Bonded) ceramic substrate I I = 2xI 800 A Pressure contact technology for FRM FRM Fnom thermal contacts I t = 10 ms, sin 180, T =25C 2646 A p j FSM Spring contact system to attach driver T -40 ... 175 C j PCB to the control terminals Module High short circuit capability, self limiting I T =80 C 400 A to 6 x I t(RMS) terminal C Integrated temperature sensor T -40 ... 125 C stg V AC sinus 50 Hz, t = 1 min 2500 V isol Typical Applications* UPS Characteristics 3 Level Inverter Symbol Conditions min. typ. max. Unit IGBT Remarks I =600A V C T =25C 1.45 1.85 V CE(sat) j V =15V Case temperature limited to GE T =150 C 1.70 2.10 V j chiplevel T = 125C max, recommended c T = -40 +150C V T =25C 0.9 1 V op j CE0 T =150 C 0.85 0.9 V j r T =25C 0.9 1.4 m j CE V =15V GE T =150 C 1.4 2.0 m j V V =V , I = 9.6 mA 5 5.8 6.5 V GE(th) GE CE C I T =25 C mA V =0 V j CES GE V = 650 V CE T =150 C mA j C f=1MHz 37.01 nF ies V =25V CE C f=1MHz 2.31 nF oes V =0 V GE C f=1MHz 1.10 nF res Q V = - 8 V...+ 15 V 4800 nC GE G R T =25C 0.7 j Gint MLI by SEMIKRON Rev. 0 01.10.2013 1SKiM601MLI07E4 Characteristics Symbol Conditions min. typ. max. Unit t T =150 C 121 ns j d(on) V = 300 V CE t T =150 C 232 ns j r I =600A C E T =150 C 6.05 mJ R =2 j on G on R =2 t G off T =150 C 599 ns j d(off) di/dt = 2087 A/s on t T =150 C 156 ns j f di/dt =2270 A/s off E T =150 C 44 mJ j off R 0.19 K/W th(j-s) SKiM 4 Characteristics Symbol Conditions min. typ. max. Unit IGBT Modules Inverse diode I = 600 A V = V F T =25C 1.5 1.9 V j F EC V =0V GE T =150 C 1.6 2.0 V SKiM601MLI07E4 j chiplevel V T =25C 0.95 1.04 1.236 V F0 j T =150 C 0.85 0.99 V j Features r T =25C 0.6 0.8 1.2 m F j IGBT 4 Trench Gate Technology T =150 C 1.2 1.7 m j Solder technology I A RRM V with positive temperature CE(sat) coefficient Q 29 C rr V =-15V GE Low inductance case E mJ rr V = 300 V R Isolated by Al O DCB (Direct Copper 2 3 R per diode 0.27 K/W th(j-s) Bonded) ceramic substrate Pressure contact technology for Clamping diode thermal contacts I = 400 A V = V F T =25C 1.4 1.8 V j F EC Spring contact system to attach driver V =0V GE T =150 C 1.4 1.8 V j PCB to the control terminals chiplevel High short circuit capability, self limiting V T =25C 0.95 1.04 1.236 V F0 j to 6 x I C T =150 C 0.85 0.99 V j Integrated temperature sensor r T =25C 0.6 0.9 1.3 m F j Typical Applications* T =150 C 1.3 1.9 m j UPS I 133 A RRM 3 Level Inverter Q C rr V =-15V GE E 2.4 mJ rr V = 300 V R R per diode 0.29 K/W th(j-s) Remarks Module Case temperature limited to T = 125C max, recommended c L 22 nH CE T = -40 +150C op R T =25C 1.35 m s CC +EE terminal-chip T =125 C 1.75 m s M to heat sink (M5) 2 3 Nm s M to terminals M6 4 5 Nm t w317g Temperature Sensor R T =100C (R =5 k ) 493 5% 100 c 25 3550 B R =R exp B (1/T-1/T ) T K K 100/125 (T) 100 100/125 100 2% MLI 2 Rev. 0 01.10.2013 by SEMIKRON