1N5550 THRU 1N5554
3SM2 THRU 3SM0
Axial Leaded Hermetically Sealed
Standard Recovery Rectifier Diode
POWER DISCRETES
Features
Description
Quick reference data
Low reverse leakage current
Hermetically sealed in fused metal oxide
V = 200 - 1000V
R Good thermal shock resistance
I 5.0A
F =
Low forward voltage drop
t = 2S
rr
Avalanche capability
V = 1.0V
F
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
JANTXV, and JANS versions.
Absolute Maximum Ratings
Electrical specifications @ T = 25C unless otherwise specified.
A
1N5550 1N5551 1N5552 1N5553 1N5554
Symbol Units
3SM2 3SM4 3SM6 3SM8 3SM0
WVorking Reverse Voltage 2000 400 600 800 1V00
RWM
Average Forward Current
@ 55C in free air, lead length I 5A.0
F(AV)
0.375"
Repetitive Surge Current
@ 55C in free air, lead length I 2A5
FRM
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V & T ) I 100 A
R JMAX FSM
(tp = 8.3mS, @ V & 25C) 150
R
STtorage Temperature Range -C65 to +175
STG
Revision: September 22, 2008 1
www.semtech.com1N5550 THRU 1N5554
3SM2 THRU 3SM0
POWER DISCRETES
Electrical Specifications
S0ymbol 1N555 1N5551 1N5552 1N5553 1N5554 Units
3SM2 3SM4 3SM6 3SM8 3SM0
Average Forward Current (sine wave)
- max. T = 55C I 3.0 A
A F(AV)
- max. L = 3/8"; T = 55C I 5.0
L F(AV)
2 2 2
ItIfor fusing (t = 8.3mS) max t24A S
Forward Voltage Drop max.
@ I = 3.0A, T=V25C 1V.0
F j F
Reverse Current max.
@ V,CTj = 25 I 1.0 A
RWM R
@ V,CTj = 125 I 60
RWM R
Reverse Recovery Time max.
t0rr 2S.
0.5A I to 1.0A I recovers to 0.25A I
F RM RM(REC)
Junction Capacitance typ.
C2j 9Fp
@ V = 5V, f = 1MHz
R
Thermal Characteristics
1N5550 1N5551 1N5552 1N5553 1N5554
Symbol Units
3SM2 3SM4 3SM6 3SM8 3SM0
Thermal Resistance-Junction to Lead
Lead length = 0.375" R 22 C/W
JL
Lead length = 0.0" R 4
JL
Thermal Resistance-Junction to
Ambient on 0.06" thick pcb. 1 oz. R 4W7 C/
JA
copper
Typical Characteristics
Fig 1. Typical junction capacitance as a function of reverse voltage.
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