The documentation and process INCH-POUND conversion measures necessary to MIL-PRF-19500/516D comply with this revision shall be 23 July 1999 completed by 23 October 1999. SUPERSEDING MIL-S-19500/516C 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A, 1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A, 1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS, 1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS, JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS This specification is approved for use within US Army Laboratory Command, Department of the Army, and is available for use by all Departments and Agenc ies of the Department of Defense. 1. SCOPE Scope . This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. The suffix denotes a five percent voltage tolerance. Physical dimensions . See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein. 1.3 Maximum ratings . Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows: 2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at = +25 C (see figure 5 R A for derating). 3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at T = +75 C for L = 0.375 R L inch (9.53 mm) (see figure 6). P 500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including PR A and US suffix versions)) at t = 1 ms (see figure 7). p C +175 C, -55 C +175 C (ambient temperatures). op STG Primary electrical characteristics . Primary electrical characteristics are as shown in columns 2 and 4 of table II herein. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A FSC 5961 Distribution Statement A. Approved for public release distribution is unlimited. 1.4 T T -55 = = P T = P 1.2 1.1 MIL-PRF-19500/516D Dimensions 1N6102 through 1N6137 1N6138 through 1N6173 1N6102A through 1N6137A 1N6138A through 1N 6173A Millimeters Millimeters BD 3 4 NOTES: Dimensions are in inches. Metric equivalents are given for general information only. Dimension BD shall be measured at the largest diameter. Dimension L lead diameter uncontrolled in this area. 1 for internal construction of a bipolar transient suppressor. FIGURE 1. Semiconductor device, diode, types 1N6102 through 1N6173 and 1N6102A through 1N6173A . 2 Symbol 5. 4. 3. 2. 1. 0.76 .030 0.76 .030 L1 33.02 25.4 1.30 1.00 33.02 25.4 1.30 1.00 LL 1.07 0.92 .042 .036 0.84 0.66 .033 .026 LD 4.95 3.56 .195 .140 4.70 3.56 .185 .140 BL 4.70 3.43 .185 .135 3.56 2.16 .140 .085 Max Min Max Min Max Min Max Min Notes Inches Inches Ltr.