RClamp0504FB Low Capacitance RClamp 5V TVS for ESD & EOS Protection PROTECTION PRODUCTS Description Features High ESD withstand Voltage: +/-24kV (Contact) & +/- RClamp TVS diodes are designed to protect sensitive 30kV (Air) per IEC 61000-4-2 electronics from damage or latch-up due to transient High EOS Surge capability surge events. This device offers desirable characteristics Low ESD clamping voltage for board level protection including fast response time, Working voltage: 5V low operating and clamping voltage, and no device Low capacitance: 1.1 pF Typical (I/O to GND) Low dynamic resistance: 0.25 degradation. Solid-state silicon-avalanche technology RClamp0504FB features extremely good ESD and EOS Mechanical Characteristics protection characteristics highlighted by low dynamic resistance and high surge capability. Data (I/O) lines SC-70 6L package are protected from EOS surge events as high as 14A Pb-Free, Halogen Free, RoHS/WEEE compliant (tp = 8/20s). Power buses may subjected to even Nominal Dimensions: 2.1 x 2.0 x 1.0 mm harsher EOS events. The TVS connection at pin 5 allows Lead Finish: Matte Tin protection of VBus lines to 28A (tp = 8/20s). Marking: Marking code Packaging: Tape and Reel RClamp0504FB is in a 6-pin, SC-70 6L package. The leads are finished with lead-free matte tin. The Applications combination of small size, low capacitance, and high ESD and EOS surge capability makes them ideal for use in Monitors and Flat Panel Displays Analog Video Lines applications such as USB 2.0, multimedia LVDS Lines cards, and video interfaces. USB 2.0 SIM Ports Circuit Diagram Schematic & Pin Configuration 5 1 3 4 6 2 SC-70 6L (Top View) RClamp0504FB 1 of 7 www.semtech.com Final Datasheet Rev 2.1 Semtech Revision date 2/20/2019 Proprietary and Confidential Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (I/O Pins, tp = 8/20s) P 230 W PK Peak Pulse Power (VBus Pin, tp = 8/20s) P 500 W PK Peak Pulse Current (I/O Pins, tp = 8/20s) I 14 A PP Peak Pulse Current (VBus Pin, tp = 8/20s) I 28 A PP (1) ESD per IEC 61000-4-2 (Air) 30 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 24 O Operating Temperature T -55 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Any pin to Pin 2 5 V RWM Reverse Breakdown Voltage V I = 1mA, any I/O Pin to Pin 2 6 8.5 10 V BR BR Reverse Leakage Current I V = 5V, any I/O Pin to Pin 2 0.1 A R RWM t = 8/20s p (Any I/O Pin to I = 14A 13.7 16.5 PP Pin 2 ) Clamping Voltage V V C t = 8/20s p I = 28A 15.5 17.5 PP (Pin 5 to Pin 2 ) t = 0.2/100ns I = 4A 10.5 p PP 2 ESD Clamping Voltage V (Any I/O Pin to V C I = 16A 13.5 PP Pin 2) 2,3 Dynamic Resistance R t = 0.2/100ns, Any I/O Pin to Pin 2 0.25 DYN p Any I/O Pin to Pin 2 1.1 2.5 Junction Capacitance C V = 0V, f = 1MHz pF J R Between I/O pins 0.55 1.5 Notes 1) Measured with a 40dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane. 2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp0504FB 2 of 7 www.semtech.com Final Datasheet Rev 2.1 Semtech Revision Date 2/20/2019 Proprietary and Confidential