RClamp3521ZA RailClamp Low Capacitance ESD and EOS Protection PROTECTION PRODUCTS Description Features High ESD withstand Voltage: +/-20kV (Contact) per RailClamp TVS diodes are designed to provide ESD and IEC 61000-4-2 EOS protection on high-speed ports. RClamp3521ZA is Ultra-small package a 1-line, bidirectional device with a typical capacitance Protects one line is only 0.45pF and working voltage of 3.5V. It is Low ESD clamping voltage manufactured using Semtechs proprietary snap-back Working voltage: 3.5V Low capacitance: 0.45 pF Typical technology which minimizes both ESD peak clamping Low leakage current and TLP clamping voltage. The dynamic resistance is Low dynamic resistance extremely low (0.12 Ohms typical) providing optimum Solid-state silicon-avalanche technology protection of sensitive circuits. Mechanical Characteristics RClamp3521ZA is in a 2-pin SLP0603P2X3F package measuring 0.6 x 0.3 x 0.25mm. Leads are finished with SLP0603P2X3F package lead-free NiAu. Pb-Free, Halogen Free, RoHS/WEEE compliant Nominal Dimensions: 0.6 x 0.3 x 0.25 mm Lead Finish: NiAu Marking: Marking code Packaging: Tape and Reel Applications USB3.0 / USB 3.1 USB Type-C V-By-One MHL / MDDI LVDS Interfaces Package Dimension Schematic & Pin Configuration 0.600 0.220 0.300 1 0.160 0.355 BSC 2 0.250 SLP0603P2X3F (Bottom View) RClamp3521ZA 1 of 8 www.semtech.com Final Datasheet Rev 2.1 Semtech Revision Date 8/24/2016 Proprietary & ConfidentialAbsolute Maximum Rating Rating Symbol Value Units Peak Pulse Power (tp = 1.2/50s) P 30 W PK Peak Pulse Current (tp = 1.2/50s) I 6 A PP (1) ESD per IEC 61000-4-2 (Air) 25 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 20 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V 3.5 V RWM Reverse Breakdown Voltage V I = 1mA 5.5 7.5 8.5 V BR t Reverse Leakage Current I V = 3.5V <1 50 nA R RWM Holding Current I 50 120 mA H I = 6A, tp = 1.2/50s, PP 2 Clamping Voltage V 8/20s Combination 5 V C Waveform I= 4A, tlp = 0.2/100ns 4.5 3 ESD Clamping Voltage V V C I=16A, tlp = 0.2/100ns 6 3,4 Dynamic Resistance R tlp = 0.2/100ns 0.12 DYN Junction Capacitance C V = 0V, f = 1MHz 0.45 0.55 pF J R Notes 1) Measured with a 20dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane. 2) Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage across the device after the device snaps back to a conducting state. 3) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 4) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp3521ZA 2 of 8 www.semtech.com Final Datasheet Rev 2.1 Semtech Revision Date 8/24/2016 Proprietary & Confidential