SLVU2.8 Low Voltage EPD TVS Diode For ESD and Latch-Up Protection PROTECTION PRODUCTSPROTECTION PRODUCTS Features Description The SLV series of transient voltage suppressors are 400 Watts peak pulse power (t = 8/20 s) p designed to protect low voltage, state-of-the-art CMOS Transient protection for high speed data lines to semiconductors from transients caused by electro- IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) static discharge (ESD), cable discharge events (CDE), IEC 61000-4-4 (EFT) 40A (5/50ns) lightning and other induced voltage surges. IEC 61000-4-5 (Lightning) 24A (8/20 s) One device protects one unidirectional line The devices are constructed using Semtechs propri- etary EPD process technology. The EPD process pro- Two devices protect two high-speed line pairs vides low standoff voltages with significant reductions Low capacitance in leakage currents and capacitance over silicon- Low leakage current avalanche diode processes. The SLVU2.8 features an Low operating and clamping voltages integrated low capacitance compensation diode that Solid-state EPD TVS process technology allows the device to be configured to protect one unidirectional line or, when paired with a second Mechanical Characteristics SLVU2.8, two high-speed line pairs. The low capaci- JEDEC SOT23 package tance design of the SLVU2.8 means signal integrity is Molding compound flammability rating: UL 94V-0 preserved in high-speed applications such as 10/100 Marking : U2.8 Ethernet. Packaging : Tape and Reel per EIA 481 The SLVU2.8 is in an SOT23 package and has a low 2.8 volt working voltage. It is specifically designed to Applications protect low voltage components such as Ethernet 10/100 Ethernet transceivers, laser diodes, ASICs, and high-speed RAM. WAN/LAN Equipment The low clamping voltage of the SLVU2.8 minimizes the Switching Systems stress on the protected IC. Desktops, Servers, Notebooks & Handhelds The SLV series TVS diodes will exceed the surge re- Laser Diode Protection quirements of IEC 61000-4-2, Level 4. Base Stations Circuit Diagram Schematic & PIN Configuration 3 1 3 2 12 SOT23 (Top View) www.semtech.com Revision 06/25/2008 1SLVU2.8 PROTECTION PRODUCTS PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit Peak Pulse Power (tp = 8/20sP) 4s00 Watt pk Peak Pulse Current (tp = 8/20sI) 2A4 PP o LTead Soldering Temperature 260 (10 seconds) C L o OTperating Temperature -55 to +125 C J o STtorage Temperature -55 to +150 C STG Electrical Characteristics SLVU2.8 Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off VoltageP8in 3 to 1 or Pin 2 to 1 2V. RWM PVunch-Through Voltage I=02A, Pin 3 to 13V. PT PT SVnap-Back Voltage I=850mA, Pin 3 to 12V. SB SB RIeverse Leakage Current V = 2.8V, T=25C 1A R RWM Pin 3 to 1 or Pin 2 to 1 CVlamping Voltage I = 2A, t = 8/20s 3V.9 C PP p Pin 3 to 1 CVlamping Voltage I = 5A, t = 8/20s 7V C PP p Pin 3 to 1 CVlamping Voltage I = 24A, t = 8/20s 1V2.5 C PP p Pin 3 to 1 CVlamping Voltage I = 5A, t = 8/20s 8V.5 C PP p Pin 2 to 1 CVlamping Voltage I = 24A, t = 8/20s 1V5 C PP p Pin 2 to 1 JCunction Capacitance Pin 3 to 1 and 2 700 1F0 p j (Pin 1 and 2 tied together) V = 0V, f = 1MHz R JCunction Capacitance Pin 2 to 1 (pin 3 N.C.) 501Fp j V = 0V, f = 1MHz R Steering Diode Characteristics RVeverse Breakdown Voltage I=010A, Pin 3 to 24V BR T RIeverse Leakage Current V = 2.8V, T=25C 1A RD RWM Pin 3 to 2 FVorward Voltage I=21A, Pin 2 to 3 V F F www.semtech.com 2008 Semtech Corp. 2
