SG01L18 2 Broadband SiC based UV photodiode A = 1,00 mm 1/4 GeneraL FeatureS Properties of the SG01L18 UV photodiode Broadband UVA+UVB+UVC, PTB reported high chip stability 2 Active Area A = 1,00 mm TO18 hermetically sealed metal housing, 1 isolated pin and 1 case pin 2 10mW/cm peak radiation results a current of approx. 13 mA About the material Silicon Carbide (SiC) SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV de- tectors. The SiC detectors can be permanently operated at up to 170C (338F). The temperature coefficient of signal (responsivity) is also low, < 0,1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably. Please note that this device needs an appropriate amplifier (see typcial circuit on page 3). Options 2 2 SiC photodiodes are available with five different active chip areas from 0,06 mm up to 4,00 mm . Standard version is broadband UVA-UVB-UVC. Four filtered versions lead to a tighter sensitivity range. All photodiodes have a hermeti - cally sealed metal housing (TO type), either a 5,5 mm diameter TO18 housing or a 9,2 mm TO5 housing. Further op- tion is either a 2 pin header (1 isolated, 1 grounded) or a 3 pin header (2 isolated, 1 grounded). nomencLature SG01 SS,, MM,, DD,, LL,, XXLL nothing, A, B, C or Enothing, A, B, C or E 18, 18ISO90, 18S, 5, 5ISO9018, 18ISO90, 18S, 5, 5ISO90 nothing, Lens, nothing, Lens, MEGA, GIGAMEGA, GIGA Chip areaChip area Spectral responseSpectral response HousingHousing SpecialSpecial 18 18 2-pin TO18 housing, h = 5,2 mm, 2-pin TO18 housing, h = 5,2 mm, SS nothing = broadbandnothing = broad band Lens 2 Lens 1 pin isolated, 1 pin grounded1 pin isolated, 1 pin grounded 0,06 mm0,06 mm with s = = 340 nm s 280 nm = = 340 nm s 221 nm ... 358 nm = 340 nm maxmax 10% leftS10% 10% right with concentrating concentrating lens, TO5 only lens, 18ISO90 18ISO90 3-pin TO18 housing, h = 5,2 3-pin TO18 housing, h = TO5 only MM A = UVAA = UVA 2 mm, 2 pins isolated, 1 pin grounded5,2 mm, 2 pins isolated, 1 pin grounded 0,20 mm0,20 mm s = = 340 nm s 331 nm = = 340 nm s 309 nm ... 367 nm = 340 nm maxmax 10% leftS10% 10% right MEGA MEGA with 18S 18S 2-pin TO18 housing, h = 3,7 mm, 2-pin TO18 housing, h = 3,8 mm, DD B = UVBB = UVB with attenuator 2 altenuator up 1 pin isolated, 1 pin grounded1 pin isolated, 1 pin grounded 0,50 mm0,50 mm 2 s = = 340 nm s 280 nm = = 340 nm s 231 nm ... 309 nm = 340 nm up to 0,5 W/cm2 maxmax 10% leftS10% 10% right to 0,5 W/cm 5 5 2-pin TO5 housing, h = 4,3 mm for 2-pin TO5 housing, h = 4,3 mm LL C = UVCC = UVC for broad band d h = 6,6 mm for filtered 2 broadband h = 6,7 mm for filtered UVA, 1,00 mm1,00 mm s = = 340 nm s 275 nm = = 340 nm s 225 nm ... 287 nm = 340 nm maxmax 10% leftS10% 10% right GIGA UVB, UVC, UVIUVA, UVB, UVC, UVI GIGA with with attenuator altenuator up 2 5ISO90 5ISO90 3-pin TO5 housing, h = 4,2 2-pin TO housing, h = 5,2 mm, XLXL E = UV-IndexE = UV-Index up to 7 W/cm2 to 7 W/cm 2 mm, 2 pins isolated, 1 pin grounded1 pin isolated, 1 pin grounded 4,0 mm4,00 mm spectral response according to CIE087 s = 340 nm s = 340 nm s = 340 nm max 10% left 10% right sglux GmbH Max-Planck-Str. 3 D12489 Berlin Tel. +49 30 5301 5211 welcome sglux.de www.sglux.de Rev. 6.0 Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.SG01L18 2 Broadband SiC based UV photodiode A = 1,0 mm 2/4 SpeciFSication Parameter Symbol Value Unit Spectral Characteristics 1 Typical Responsivity at Peak Wavelength S 0,130 AW max Wavelength of max. Spectral Responsivity 280 nm max Responsivity Range (S=0,1*S ) 221 358 nm max 10 Visible Blindness (S /S ) VB > 10 max >405nm General Characteristics (T=25C) 2 Active Area A 1,00 mm Dark Current (1V reverse bias) I 3,3 fA d Capacitance C 250 pF 2 Short Circuit (10mW/cm at peak) I 13 mA o Temperature Coefficient T < 0,1 %/K c Maximum Ratings Operating Temperature T 55 +170 C opt Storage Temperature T 55 +170 C stor Soldering Temperature (3s) T 260 C sold Reverse Voltage V 20 V Rmax Lorman ized SpectraL reSSpon ivity sglux GmbH Max-Planck-Str. 3 D12489 Berlin Tel. +49 30 5301 5211 welcome sglux.de www.sglux.de Rev. 6.0 Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.