GL480E00000F Sharp

60 60 GL480/GL480Q/GL483Q Infrared Emitting Diode GL480/GL480Q GL483Q ( ) n Features n Outline Dimensions Unit : mm ( ) 1. Narrow beam angle : TYP. 13 GL480/GL480Q Pink transparent epoxy resin (GL480) 2. Radiant flux ( e : MIN. 0.7mW at 2- C0.5 1.15 0.2 3.0 Transparent 0.75 ) I = 20mA ( ) F epoxy resin GL480Q 3. Compact, high reliability by chip coating ( ) GL480Q/GL483Q 0.15 0.1 2 R0.8 4. Long lead type (GL483Q) 1.7 1 n Applications 1. Copiers 2.54 2- 0.4 1 Cathode 1.6 2. Floppy disk drives 2 Anode 3. Optoelectronic switches 2.8 1 2 GL483Q Transparent 0.2 1.15 3.0 epoxy resin 2 - C0.5 0.75 2 0.15 0.2 1.6 1.7 2- 0.6 1 2.54 2 - 0.4 1 Cathode 1.6 2 Anode ( ) n Absolute Maximum Ratings Ta= 25C 2.8 Parameter Symbol Rating Unit 1 2 Power dissipation P 75 mW Forward current IF 50 mA *1 Peak forward current I 1A FM Reverse voltage V R 6V Operating temperature T opr - 25 to + 85 C Storage temperature T - 40 to + 85 C stg *2 Soldering temperature T sol 260 C *1 Pulse width<=100 s, Duty ratio = 0.01 *2 For 3 seconds at the position of 1.4mm from the bottom face of resin package. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP s devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP s device. Rest of Rest of gate gate 0.2 2.95 MAX. MAX. 0.2 0.3 0.3 2.95 0.2 2.15 0.2 2.15 MAX. MIN. MAX. MIN. 0.8 1.5 0.5 0.8 1.5 0.5 + 1.5 17.5 3.0 - 1.0 18.5 Emitter center 4.0 0.2 Emitter center 4.0 0.2 40.0 1GL480/GL480Q/GL483Q ( ) n Electro-optical Characteristics Ta = 25C Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V I = 20mA - 1.2 1.4 V F F V I = 0.5A - 3.0 4.0 V Peak forward voltage FM FM Reverse current IR V R =3V -- 10 A Terminal capacitance C V = 0, f = 1MHz -50 - pF t R Response frequency fc - - 300 - kHz Radiant flux e IF = 20mA 0.7 - 3.0 mW Peak emission wavelength p I = 5mA - 950 - nm F Half intensity wavelength IF = 5mA - 45 - nm Half intensity angle IF = 20mA - 13 - Fig. 1 Forward Current vs. Fig. 2 Peak Forward Current vs. Ambient Temperature Duty Ratio 60 10000 Pulse width <=100 s T = 25C 5000 a 50 2000 40 1000 500 30 200 20 100 50 10 20 0 10 -3 -2 -1 25 25 2 5 -25 0 255075 85100 10 10 10 1 Ambient temperature T (C) Duty ratio a Fig. 3 Spectral Distribution Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 100 1000 I = const. F I = 5mA F T = 25C a 80 975 60 950 40 925 20 0 900 880 900 920 940 960 980 1000 1020 1040 -25 0 255075 100 ( ) Wavelength nm Ambient temperature T a (C) Relative radiant intensity ( % ) Forward current I ( mA ) F ( ) Peak forward current I mA FM Peak emission wavelength ( nm ) P