Bridge Diode Single In-line Package OUTLINE Unit : mm Package5S D25XB100 Weight : 7.1gtyp. 1000V 25A SIP UL E142422 D25X100B0264 IFSM Feature Thin-SIP UL E142422 Large Io High VoltageLarge IFSM Web High Thermal Radiation For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS RATINGS Absolute Maximum Ratings Type No. D25XB100 Symbol Unit Item Conditions Storage Temperature Operation Junction Temperature Maximum Reverse Voltage With heatsink 50Hz sine wave, Average Rectified Forward Current Resistance load Without heatsink Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 Dielectric Strength Terminals to Case, AC 1 minute Mounting Torque Recommended torque : 0.5 N m Electrical Characteristics Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current Junction to Case, With heatsink l Thermal Resistance Junction to Lead, Without heatsink Junction to Ambient, Without heatsink J534-1 110Thin SIP UL Bridge D25XB100 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 111