VF Bridge Diode Low VF Low Noise type Single In-line Package OUTLINE Unit : mm Package5S LL25XB60 Weight : 7.1gtyp. 600V 25A SIP UL E142422 LL25XB60 0264 VF Feature Thin-SIP UL E142422 Low NoiseLow VF Large Io Web High Thermal Radiation For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS RATINGS Absolute Maximum Ratings LL25XB60 Type No. Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage With heatsink Average Rectified Forward Current 50Hz sine wave, Resistance load Without heatsink 50Hz sine wave , Non-repetitive 1cycle peak value, Tj = 25 Peak Surge Forward Current tp=1ms sine wave, Non-repetitive 1cycle peak value, Tj = 25 Current Squared Time per diode Dielectric Strength Terminals to Case, AC 1 minute Mounting Torque Recommended torque : 0.5 N m Electrical Characteristics Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current Reverse Recovery Time per diode Junction to Case, With heatsink l Thermal Resistance Junction to Lead, Without heatsink Junction to Ambient, Without heatsink J534-1 112Thin SIP UL Bridge LL25XB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 113