FastRecoveryDiode Single OUTLINE Unitmm PackageAX10 S2K100 1000V2A trrns Feature 2KA 00 HighVoltage LowNoise trr=75ns Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tc25/unlessotherwisespecified Item Symbol Conditions Ratings Unit Tstg 55150 StorageTemperature Tj 150 OperatingJunctionTemperature VRM 1000 V MaximumReverseVoltage 50HzTa=25 0.9 50Hzsinewave,Resistanceload,Ta=25C Io A AverageRectifiedForwardCurrent 50HzTl91 2.0 50Hzsinewave,Resistanceload,Tl=91C 50Hz1Tj=25 IFSM 65 A 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25C PeakSurgeForwardCurrent tp=1ms1Tj=25 IFSM1 100 A tp=1msSinewave,Non-repetitive1cyclepeakvalue,Tj=25C ElectricalCharacteristics Tc25/unlessotherwisespecified MAX VF IF2A, 2.1 V ForwardVoltage Pulsemeasurement MAX IR VR1000V, 10 A ReverseCurrent Pulsemeasurement MAX IF0.5A,IR1.0A,0.25IR 75 trr ns ReverseRecoveryTime MAX I1A,V400V,di/dt50A/s,0.25I 85 F R R TYP Cj f1MHz,V10V 14 pF R JunctionCapacitance MAX jl 12 /W Junctiontolead ThermalResistance MAX ja 83 /W Junctiontoambient J533-p2012.06 www.shindengen.co.jp/product/semi/S2K100 CHARACTERISTICDIAGRAMS Forward Voltage Reverse Current Forward Power Dissipation l l l l l l l l l l Tc-Io Tl -Io Derating Curve Ta-Io Derating Curve Tl -Io Peak Surge Forward Current Capability l Peak Surge Forward Current Capability Peak Surge Forward Current Derating vs Junction Temperature Junction Capacitance l Transient Thermal Impedance l Sinewave50Hz 50Hzsinewaveisusedformeasurements. J533-p2012.06 www.shindengen.co.jp/product/semi/ l