SchottkyBarrierDiode Twin OUTLINE Unitmm PackageFTO-220G3pin SG10SC4M 40V10A Tj= 0000 Feature G10SC4M Tj=175C Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tc25/unlessotherwisespecified Item Symbol Ratings Unit Conditions Tstg StorageTemperature Tj OperationJunctionTemperature VRM V MaximumReverseVoltage .msduty1/40 VRRSM V RepetitivePeakSurgeReverseVoltage Pulsewidth0.5ms,duty1/40 50HzIo/2,Tc= Io A AverageRectifiedForwardCurrent 50Hzsinewave,Resistanceload,PerdiodeIo/2,Tc=150C HzTj IFSM 15 A PeakSurgeForwardCurrent 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25C AC Vdis 1.5 kV DielectricStrength Terminalstocasebackside,AC1minute .Nm TOR . Nm MountingTorque (Recommendedtorque:0.3Nm) ElectricalCharacteristics Tc/unlessotherwisespecified MAX . VF IFA, V ForwardVoltage Pulsemeasurement,Perdiode TYP. MAX IR VRVRM, . mA ReverseCurrent Pulsemeasurement,Perdiode TYP Cj fMHz,VRV, pF JunctionCapacitance Perdiode MAX jc . /W ThermalResistance Junctiontocase J533-p2012.12 www.shindengen.co.jp/product/semi/SG10SC4M CHARACTERISTICDIAGRAMS Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Reverse Current Reverse Power Dissipation Junction Capacitance l Tc-Io Derating Curve Tc-Io Sinewave50Hz 50Hzsinewaveisusedformeasurements. J533-p2012.12 www.shindengen.co.jp/product/semi/