501BAA50M0000CAG Silicon Labs

Si501/2/3/4 LVCMOS CMEMS Programmable Oscillator Series Description Features The Si501/2/3/4 CMEMS programmable oscillator series combines Any frequency oscillator from 32 kHz to 100 MHz standard CMOS + MEMS in a single, monolithic IC to provide high-quality o Contact Silicon Labs Marketing for frequencies above and high-reliability oscillators. Each device is specified for guaranteed 100 MHz performance across voltage, process, temperature, shock, vibration and Frequency stability: 20/30/50 ppm including 10-year aging for 10 years. More information on CMEMS available at aging www.silabs.com/cmems. -20 to +70 C: Extended Commercial -40 to +85 C: Industrial Applications: General purpose microcontrollers, industrial control, IP Highly configurable: low power vs. low jitter, frequency, F , STAB cameras, surveillance systems, metering, home and office automation, T /T , V , OE/FS functionality (see ordering guide below) R F DD security systems, sleep clocking, 10/100 Ethernet/EtherCAT, SPI, SAS3.0 / In-circuit programmable via C1D 1-pin interface (Si504) SATA3.0, PCIe ref clock, NVMe, HDD, SSD, hybrid storage, DDR3/3L, Seamless V from +1.71 to +3.63 V DD USB2.0, USB OTG/2.0, M2M, HDMI Low period jitter mode / low power mode Glitchless start and stop Not recommended: Wi-Fi, Bluetooth, USB 3.0, Gigabit Ethernet RoHS compliant, Pb-free Product Selector Guide Pin-out Pin Description Part Description Control Pin Description Number Number Si501 Single frequency OE 1 FS = Frequency Select Si502 Dual frequency FS/OE OE = Output Enable C1D = Single wire interface Si503 Quad frequency FS Si504 Programmable for any C1D 1-pin interface 2 GND = Ground supported frequency (see Si504 data sheet 3 CLK = Clock out or configuration for details) 4 VDD = Power Supply (top view) Ordering Guide 6 TYP Jittervs 501 502 VDD T /T Power OE OE Internal OE Internal R F 1 High Low PullResistor Low PullResistor A 1.73.6 0.7ns 2 B 3.3V 1.3ns A Stop A Stop 2 B Enable Doze PullUp B Doze PullUp C 2.5V 1.3ns Low 2 D 1.8V 1.3ns C Sleep C Sleep Power 3 D Stop D Stop E 1.73.6 3ns 3 F 1.73.6 5ns E Doze Enable PullDown E Doze None 5 3 F Sleep F Sleep 504only G 1.73.6 8ns 1 H 1.73.6 0.7ns G Stop MaximumF OUT 503 2 H Enable Doze J 3.3V 1.3ns A 0.03280MHz A PullUp 2 K 2.5V 1.3ns J Sleep B 0.032100MHz None B None 2 K Stop L 1.8V 1.3ns LowJitter 3 M 1.73.6 3ns L Doze Enable Temp 504 3 M Sleep Range N 1.73.6 5ns A PullUponly 3 P 1.73.6 8ns F 20to70C G 40to85C OPN Description 50X A R Prefix 501 Singlefrequency Reel 502 Dualfrequency R Reel 503 Quadfrequency Freq CutTape OPN Description 504 Anyfrequency Code Mxxxxxx f <1MHz Package OUT ppm Dimension xMxxxxx 1MHzf <10MHz OUT 501only 4 A 50 xxMxxxx 10MHzf <100MHz B 3.2x5mm OUT B 30 100M000 f =100MHz C 2.5x3.2mm OUT C 20 501/2/3/4 xxxxxx SiliconLabs6digitcodefor502/3/4,or>6decimalfreqon501 D 2x2.5mm Ordering Guide Notes: 1. Series termination resistor (R see Apps Circuits section) is recommended for this configuration. S ) is not needed for this configuration. Output impedance is 50 for the indicated supply condition. 2. Series termination resistor (R S 3. Series termination resistor (R ) is not needed for this configuration. Reduced EMI setting. S 4. 3.2 x 5 mm package is delivered as 3.2 x 4 mm and accommodates the industry-standard 3.2 x 5 mm footprint. 5. Select option to support maximum anticipated frequency needed. 6. The Si502 OE pin has three (3) states: OE High = Freq 1 OE Weak High = Freq 2 OE Low is configurable. Revision 0.72 Copyright 2013 by Silicon Labs Si501/2/3/4 CMEMS Oscillator Series This information applies to a product under development. Its characteristics and specifications are subject to change without notice. www.silabs.com/cmems Si501/2/3/4 LVCMOS CMEMS Programmable Oscillator Series Selected Electrical Specifications V = +1.71 V to +3.63 V, T = -40 to 85 C unless stated otherwise. DD A Parameter Symbol Test Condition/Comment Min Typ Max Unit Frequency Range F Programmable family range 0.032 100 MHz CLK Supply Voltage V Supports continuous V from Min to Max 1.71 3.63 V DD DD 3.3 V , F = 1 MHz, 4 pF, Low Power mode 1.7 2.5 mA DD CLK Supply Current I DD1 3.3 V , F = 1 MHz, 4 pF, Low Jitter mode 3.9 4.9 mA DD CLK Stop mode, F = 1 MHz, Low Power mode 1.7 2.5 mA CLK Stop mode, F = 1 MHz, Low Jitter mode 3.9 4.9 mA CLK 1 Static Supply Current I DD2 Doze mode 670 890 A Sleep mode 0.3 1 A -20 +20 ppm 2 Frequency Stability F TA = -20 C to +70 C, -40 C to +85 C -30 +30 ppm STAB -50 +50 ppm st 4 4 1 option code = A or H 0.4 0.7 1.2 ns st 1 option code = B, C, D, J, K, L 1 1.3 1.6 ns 3 st CMOS Rise/Fall Time T /T 1 option code = E, M 2 3 4 ns R F st 1 option code = F, N 4 5 7 ns st 1 option code = G, P 7 8 11 ns F = 100 MHz, Low Jitter mode CLK Cycle-to-Cycle Jitter J st 14 25 ps pk-pk CCPP 1 option code = H F = 100 MHz, Low Jitter mode CLK Period Jitter Pk-Pk J st 9 13 ps pk-pk PPKPK 1 option code = H F = 100 MHz, Low Jitter mode CLK Period Jitter J st 1 1.6 ps rms PRMS 1 option code = H 5 F = 75 MHz, F = 900 kHz - 7.5 MHz CLK OFFSET Phase Jitter 1 1.3 ps rms st Low Jitter mode, 1 option code = H Drive strength selected such that T /T R F Duty Cycle DC 45 50 55 % (20% to 80%) < 10 % of period Input High Voltage V 0.7 x V V IH DD Input Low Voltage V 0.3 x V V IL DD Output High Voltage V 0.9 x V V OH DD Output Low Voltage V 0.1 x V V OL DD 1. Si501 supports OE/mode functionality. Si502 supports OE/mode and FS functionality. Si503 supports only FS functionality. See data sheet functional description section for more information. 2. Frequency stability includes initial tolerance, solder shift, operating temp range, rated power supply voltage change, load change, 10-year aging, shock, and vibration. 3. C = 15 pF, T /T (20% to 80%), 3.3 V unless otherwise stated. See datasheet for additional T /T options. L R F R F 4. Recommended series termination resistor (R ) = 24.9 for Z =50 . S 0 5. Integrated phase jitter exceeds some high-performance data communications system requirements. See AN783 for more information. 1 Absolute Maximum Ratings Condition Parameter Symbol Rating Unit Storage Temperature T -55 to 125 C S Supply Voltage V -0.5 to 3.8 C DD Input Voltage V 0.5 to V +0.3 V IN DD ESD HBM (JESD22-A114) HBM 2000 V ESD CDM CDM 500 V 2 Solder Temp T 260 C PEAK 2 Solder Time at T T 20-40 s PEAK P Max Junction Temp T 125 C J 1. Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended periods may affect device reliability. 2. The device is compliant with JEDEC J-STD-020. 2 Revision 0.72 www.silabs.com/cmems