Product Information

SED3080M

SED3080M electronic component of SINO-IC

Datasheet
MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mΩ @ 25A,10V DFN 3x3 RoHS
Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2222 ea
Line Total: USD 1.11

14195 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
7100 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

SED3080M
SINO-IC

5 : USD 0.213
50 : USD 0.1708
150 : USD 0.1525
500 : USD 0.13
2500 : USD 0.1128
5000 : USD 0.1068

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SED3080M with MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mO @ 25A, 10V DFN 3x3 RoHS manufactured by SINO IC is an integrated circuit designed for power management and motor control applications. It is a single-die high-voltage power MOSFET featuring N-Trench technology for low on-resistance. It provides a maximum of 80 A current-carrying capability at an operating voltage of up to 30 V, and the on-resistance characteristics are 6.5 mO at 25 A and 3 V @ 250 uA. It is equipped with a DFN 3x3 RoHS compliant package to provide enhanced thermal dissipation and high-operating reliability. The SED3080M is suitable for use in high-reflection and transient voltage protection described in UL (Underwriters Laboratories), Class 2 and other safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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