X-On Electronics has gained recognition as a prominent supplier of SED3080M MOSFETs across the USA, India, Europe, Australia, and various other global locations. SED3080M MOSFETs are a product manufactured by SINO-IC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SED3080M SINO-IC

Name: SED3080M
Brand: SINO-IC
SKU: SED3080M_SINO-IC
Availability: InStock
Rating: 5 (11 reviews)

SED3080M electronic component of SINO-IC

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See Product Specifications

Part No.	SED3080M
Manufacturer:	SINO-IC
Category:	MOSFETs
Description:	MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mÎ© @ 25A,10V DFN 3x3 RoHS
Datasheet:	SED3080M Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1836 ea
Line Total: USD 0.92

Availability - 3868
Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ: 5 Multiples: 5
Pack Size: 5

SED3080M More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

3868

Ship by Fri. 03 Jan to Wed. 08 Jan

MOQ : 5
Multiples : 5

5 : USD 0.1836
50 : USD 0.1471
150 : USD 0.1315
500 : USD 0.1121
2500 : USD 0.0974
5000 : USD 0.0922

Specifications

Manufacturer
SINO-IC SINO-IC

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
DFN 3X3 DFN 3X3

Brand Category
SINO-IC SINO-IC

Fet Type
n trench n trench

Drain To Source Voltagevdss
30 V 30 V

Continuous Drain Current Id @ 25°C
80 A 80 A

Vgsth Max @ Id
3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs
6.5 m @ 25a,10v 6.5 m @ 25a,10v

Power Dissipation-Max Ta
83 W 83 W

Drain Source Voltage Vdss
30 V 30 V

Continuous Drain Current Id
80 A 80 A

Power Dissipation Pd
83 W 83 W

Drain Source On Resistance Rdson@Vgs Id
6.5 mOhms @10V , 25A 6.5 mOhms @10V , 25A

Gate Threshold Voltage Vgsth@Id
3 V @250uA 3 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

SED3080M Alternative Parts

We are delighted to provide the SED3080M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SED3080M and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SED3080M with MOSFET N Trench 30V 80A 3V @ 250uA 6.5 mO @ 25A, 10V DFN 3x3 RoHS manufactured by SINO IC is an integrated circuit designed for power management and motor control applications. It is a single-die high-voltage power MOSFET featuring N-Trench technology for low on-resistance. It provides a maximum of 80 A current-carrying capability at an operating voltage of up to 30 V, and the on-resistance characteristics are 6.5 mO at 25 A and 3 V @ 250 uA. It is equipped with a DFN 3x3 RoHS compliant package to provide enhanced thermal dissipation and high-operating reliability. The SED3080M is suitable for use in high-reflection and transient voltage protection described in UL (Underwriters Laboratories), Class 2 and other safety standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
3868 Ship by Fri. 03 Jan to Wed. 08 Jan MOQ : 5 Multiples : 5	5 : USD 0.1836 50 : USD 0.1471 150 : USD 0.1315 500 : USD 0.1121 2500 : USD 0.0974 5000 : USD 0.0922

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