SiT8209 Ultra-Performance Oscillator Features Applications Any frequency between 80.000001 and 220 MHz accurate to SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI 6 decimal places Express, video, Wireless 100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz) Frequency stability as low as 10 PPM Industrial or extended commercial temperature range LVCMOS/LVTTL compatible output Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Outstanding silicon reliability of 2 FIT or 500 million hour MTBF Pb-free, RoHS and REACH compliant Ultra-short lead time 1 Table 1. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Output Frequency Range f 80.000001 220 MHz Frequency Stability F stab -10 +10 PPM Inclusive of Initial tolerance at 25 C, and variations over operating temperature, rated power supply voltage and load -20 +20 PPM -25 +25 PPM -50 +50 PPM Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported. Contact SiTime for guaranteed performance specs for supply 2.25 2.5 2.75 V voltages not specified in this table. 2.52 2.8 3.08 V 2.97 3.3 3.63 V Current Consumption Idd 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V OE Disable Current I OD 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Standby Current I std 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down 10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down Duty Cycle DC 45 55 % f <= 165 MHz, all Vdds. 40 60 % f > 165 MHz, all Vdds. Rise/Fall Time Tr, Tf 1.2 2 ns 15 pF load, 10% - 90% Vdd Output Voltage High VOH 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V) IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V) Output Voltage Low VOL 10% Vdd Input Voltage High VIH 70% Vdd Pin 1, OE or ST Input Voltage Low VIL 30% Vdd Pin 1, OE or ST Z in Input Pull-up Impedance 100 250 k Pin 1, OE logic high or logic low, or ST logic high 2 M Pin 1, ST logic low T start 7 10 ms Startup Time Measured from the time Vdd reaches its rated minimum value T oe 115 ns OE Enable/Disable Time f = 80 MHz, For other frequencies, T oe = 100 ns + 3 cycles T resume 10 ms Resume Time In standby mode, measured from the time ST pin crosses 50% threshold. Refer to Figure 5. T jitt 1.5 2 ps RMS Period Jitter f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V 2 3 ps f = 156.25 MHz, Vdd = 1.8V T phj 0.5 1 ps RMS Phase Jitter (random) f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz F aging -1.5 +1.5 PPM 25C First year Aging 10-year Aging -5 +5 PPM 25C Note: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. Rev 1.1 January 2, 2017 www.sitime.com SiT8209 Ultra-Performance Oscillator Table 2. Pin Configuration Top View Pin Symbol Functionality 2 Output H or Open : specified frequency output Enable L: output is high impedance. Only output driver is disabled. 1 4 OE/ST VDD 2 1 OE/ ST H or Open : specified frequency output Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. 3 2 GND Power Electrical ground 2 3 GND OUT 3 OUT Output Oscillator output 3 4 VDD Power Power supply voltage Figure 1. Pin Assignments Notes: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment. 3. A capacitor of value 0.1 F between Vdd and GND is recommended. Table 3. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Junction Temperature 150 C Table 4. Thermal Consideration Package JA, 4 Layer Board (C/W) JA, 2 Layer Board (C/W) JC, Bottom (C/W) 7050 191 263 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 Table 5. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.1 Page 2 of 15 www.sitime.com