SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Features Applications AEC-Q100 with extended temperature range (-55C to 125C) Automotive, extreme temperature and other high-rel electronics Frequencies between 1 MHz and 110 MHz accurate to 6 decimal Infotainment systems, collision detection devices, and in-vehicle places networking Supply voltage of 1.8V or 2.25V to 3.63V Power train control Excellent total frequency stability as low as 25 ppm Industry best G-sensitivity of 0.1 PPB/G Low power consumption of 3.8 mA typical at 1.8V LVCMOS/LVTTL compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free Electrical Specifications 1, 2 Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 110 MHz Refer to Table 13 and Table 14 for a list supported frequencies Frequency Stability and Aging Frequency Stability F stab -25 +25 ppm Inclusive of Initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply -30 +30 ppm voltage and load (15 pF 10%). -50 +50 ppm Operating Temperature Range Operating Temperature Range T use -40 +105 C Extended Industrial, AEC-Q100 Grade 2 (ambient) -40 +125 C Automotive, AEC-Q100 Grade 1 -55 +125 C Extended Temperature, AEC-Q100 Supply Voltage and Current Consumption Supply Voltage Vdd 1.62 1.8 1.98 V All voltages between 2.25V and 3.63V including 2.5V, 2.8V, 3.0V and 3.3V are supported. 2.25 3.63 V Current Consumption Idd 4.0 4.8 mA No load condition, f = 20 MHz, Vdd = 2.25V to 3.63V 3.8 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8V LVCMOS Output Characteristics Duty Cycle DC 45 55 % All Vdds Rise/Fall Time Tr, Tf 1.5 3 ns Vdd = 2.25V - 3.63V, 20% - 80% 1.3 2.5 ns Vdd = 1.8V, 20% - 80% Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd = 3.0V or 3.3V) IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V) Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd = 3.0V or 3.3V) IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V) Input Characteristics Input High Voltage VIH 70% Vdd Pin 1, OE Input Low Voltage VIL 30% Vdd Pin 1, OE Input Pull-up Impedence Z in 100 k Pin 1, OE logic high or logic low Startup and Resume Timing Startup Time T start 10 ms Measured from the time Vdd reaches 90% of final value Enable/Disable Time T oe 130 ns f = 110 MHz. For other frequencies, T oe = 100 ns + 3 * cycles Jitter RMS Period Jitter T jitt 1.6 2.5 ps f = 75 MHz, 2.25V to 3.63V 1.9 3.0 ps f = 75 MHz, 1.8V RMS Phase Jitter (random) T phj 0.5 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz 1.3 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz Notes: 1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated. 2. The typical value of any parameter in the Electrical Characteristics table is specified for the nominal value of the highest voltage option for that parameter and at 25 C temperature. SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.01 Revised June 18, 2015SiT8924 Automotive AEC-Q100 Oscillator The Smart Timing Choice The Smart Timing Choice Table 2. Pin Description Top View Pin Symbol Functionality 3 H : specified frequency output Output Enable 1 4 OE/NC VDD L: output is high impedance. Only output driver is disabled. 1OE/NC 3 Any voltage between 0 and Vdd or Open : Specified frequency No Connect output. Pin 1 has no function. 4 2 GND Power Electrical ground 2 3 OUT GND 3 OUT Output Oscillator output 4 4 VDD Power Power supply voltage Figure 1. Pin Assignments Notes: 3. In OE mode, a pull-up resistor of 10k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 4. A capacitor of value 0.1 F or higher between Vdd and GND is required. N Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C Vdd -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C 5 Junction Temperature 150 C Note: 5.Exceeding this temperature for extended period of time may damage the device. 6 Table 4. Thermal Consideration JA, 4 Layer Board JA, 2 Layer Board JC, Bottom Package (C/W) (C/W) (C/W) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 Note: 6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. 7 Table 5. Maximum Operating Junction Temperature Max Operating Temperature (ambient) Maximum Operating Junction Temperature 105C 115C 125C 135C Note: 7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.01 Page 2 of 12 www.sitime.com