X-On Electronics has gained recognition as a prominent supplier of S34ML01G100TFB000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML01G100TFB000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML01G100TFB000 SkyHigh Memory

S34ML01G100TFB000 electronic component of SkyHigh Memory
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Part No.S34ML01G100TFB000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash SLC,1Gb,4x,3V,x8,1bit,TS48,
Datasheet: S34ML01G100TFB000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.8802 ea
Line Total: USD 5.88 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
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0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.8802
10 : USD 4.9485
25 : USD 4.8849
96 : USD 4.2499
288 : USD 4.2377
576 : USD 4.0789
1056 : USD 3.9202
2592 : USD 3.8835
5088 : USD 3.7492

   
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We are delighted to provide the S34ML01G100TFB000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML01G100TFB000 and other electronic components in the NAND Flash category and beyond.

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S34ML01G1 S34ML02G1 S34ML04G1 1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded Distinctive Characteristics Density NAND flash interface 1 Gb/ 2 Gb / 4 Gb Open NAND Flash Interface (ONFI) 1.0 compliant Address, Data and Commands multiplexed Architecture Supply voltage Input / Output Bus Width: 8-bits / 16-bits Page size: 3.3-V device: Vcc = 2.7 V ~ 3.6 V x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area Security x16 = 1056 (1024 + 32) words; 32 words is spare area One Time Programmable (OTP) area Block size: 64 Pages Hardware program/erase disabled during power transition x8 = 128 KB + 4 KB Additional features x16 = 64k + 2k words 2 Gb and 4 Gb parts support Multiplane Program and Erase Plane size: commands 1 Gb / 2 Gb: 1024 Blocks per Plane Supports Copy Back Program x8 = 128 MB + 4 MB 2 Gb and 4 Gb parts support Multiplane Copy Back Program x16 = 64M + 2M words Supports Read Cache 4 Gb: 2048 Blocks per Plane Electronic signature x8 = 256 MB+ 8 MB x16 = 128M + 4M words Manufacturer ID: 01h Device size: Operating temperature 1 Gb: 1 Plane per Device or 128 MB Industrial: -40 C to 85 C 2 Gb: 2 Planes per Device or 256 MB Automotive: -40 C to 105 C 4 Gb: 2 Planes per Device or 512 MB Performance Page Read / Program For one plane structure (1-Gb density) Block zero is valid and will be valid for at least 1,000 Random access: 25 s (Max) program-erase cycles with ECC Sequential access: 25 ns (Min) For two plane structures (2-Gb and 4-Gb densities) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase (S34ML01G1) 1,000 program-erase cycles with ECC Block Erase time: 2.0 ms (Typ) Package options Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) Lead Free and Low Halogen Block Erase time: 3.5 ms (Typ) 48-Pin TSOP 12 20 1.2 mm Reliability 63-Ball BGA 9 11 1 mm 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) 10 Year Data retention (Typ) Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00676 Rev. *V Revised March 20, 2018S34ML01G1 S34ML02G1 S34ML04G1 Contents 1. General Description..................................................... 4 5.8 Thermal Resistance...................................................... 37 5.9 Program / Erase Characteristics................................... 37 1.1 Logic Diagram................................................................ 5 1.2 Connection Diagram ...................................................... 6 6. Timing Diagrams......................................................... 38 1.3 Pin Description............................................................... 7 6.1 Command Latch Cycle.................................................. 38 1.4 Block Diagram................................................................ 8 6.2 Address Latch Cycle..................................................... 38 1.5 Array Organization......................................................... 9 6.3 Data Input Cycle Timing................................................ 39 1.6 Addressing................................................................... 10 6.4 Data Output Cycle Timing 1.7 Mode Selection ............................................................ 12 (CLE=L, WE#=H, ALE=L, WP#=H)............................... 39 2. Bus Operation ............................................................ 13 6.5 Data Output Cycle Timing (EDO Type, CLE=L, WE#=H, ALE=L) .......................... 40 2.1 Command Input ........................................................... 13 6.6 Page Read Operation ................................................... 40 2.2 Address Input............................................................... 13 6.7 Page Read Operation (Interrupted by CE#).................. 41 2.3 Data Input .................................................................... 13 6.8 Page Read Operation Timing with CE# Dont Care...... 41 2.4 Data Output.................................................................. 13 6.9 Page Program Operation.............................................. 42 2.5 Write Protect ................................................................ 13 6.10 Page Program Operation Timing 2.6 Standby........................................................................ 13 with CE# Dont Care ..................................................... 42 3. Command Set............................................................. 14 6.11 Page Program Operation with Random Data Input ...... 43 3.1 Page Read................................................................... 15 6.12 Random Data Output In a Page ................................... 43 3.2 Page Program.............................................................. 15 6.13 Multiplane Page Program Operation 3.3 Multiplane Program S34ML02G1 and S34ML04G1................................. 44 S34ML02G1 and S34ML04G1................................ 16 6.14 Block Erase Operation.................................................. 45 3.4 Page Reprogram 6.15 Multiplane Block Erase S34ML02G1 and S34ML04G1................................ 16 S34ML02G1 and S34ML04G1................................. 45 3.5 Block Erase.................................................................. 18 6.16 Copy Back Read with Optional Data Readout.............. 46 3.6 Multiplane Block Erase 6.17 Copy Back Program Operation S34ML02G1 and S34ML04G1................................ 18 With Random Data Input............................................... 46 3.7 Copy Back Program..................................................... 18 6.18 Multiplane Copy Back Program 3.8 EDC Operation S34ML02G1 and S34ML04G1....... 19 S34ML02G1 and S34ML04G1................................. 47 3.9 Read Status Register................................................... 21 6.19 Read Status Register Timing........................................ 48 3.10 Read Status Enhanced 6.20 Read Status Enhanced Timing ..................................... 48 S34ML02G1 and S34ML04G1................................ 22 6.21 Reset Operation Timing................................................ 48 3.11 Read Status Register Field Definition.......................... 22 6.22 Read Cache.................................................................. 49 3.12 Reset............................................................................ 22 6.23 Cache Program............................................................. 50 3.13 Read Cache................................................................. 23 6.24 Multiplane Cache Program 3.14 Cache Program............................................................ 24 S34ML02G1 and S34ML04G1................................. 51 3.15 Multiplane Cache Program 6.25 Read ID Operation Timing ............................................ 53 S34ML02G1 and S34ML04G1................................ 25 6.26 Read ID2 Operation Timing .......................................... 53 3.16 Read ID........................................................................ 26 6.27 Read ONFI Signature Timing........................................ 54 3.17 Read ID2...................................................................... 29 6.28 Read Parameter Page Timing ...................................... 54 3.18 Read ONFI Signature .................................................. 29 6.29 OTP Entry Timing ......................................................... 54 3.19 Read Parameter Page ................................................. 29 6.30 Power On and Data Protection Timing ......................... 55 3.20 One-Time Programmable (OTP) Entry ........................ 31 6.31 WP# Handling............................................................... 55 4. Signal Descriptions ................................................... 32 7. Physical Interface ....................................................... 56 4.1 Data Protection and Power On / Off Sequence ........... 32 7.1 Physical Diagram.......................................................... 56 4.2 Ready/Busy.................................................................. 32 8. System Interface ......................................................... 58 4.3 Write Protect Operation ............................................... 33 9. Error Management ...................................................... 59 5. Electrical Characteristics.......................................... 34 9.1 System Bad Block Replacement................................... 59 5.1 Valid Blocks ................................................................. 34 9.2 Bad Block Management................................................ 60 5.2 Absolute Maximum Ratings ......................................... 34 5.3 Recommended Operating Conditions.......................... 34 10. Ordering Information.................................................. 61 5.4 AC Test Conditions...................................................... 34 11. Document History Page ............................................. 62 5.5 AC Characteristics ....................................................... 35 5.6 DC Characteristics....................................................... 36 5.7 Pin Capacitance........................................................... 36 Document Number: 002-00676 Rev. *V Page 2 of 71

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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