X-On Electronics has gained recognition as a prominent supplier of S34ML16G202BHI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML16G202BHI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML16G202BHI000 SkyHigh Memory

S34ML16G202BHI000 electronic component of SkyHigh Memory
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Part No.S34ML16G202BHI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash Nand
Datasheet: S34ML16G202BHI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 29.0319
10 : USD 27.5045
25 : USD 26.1088
50 : USD 25.4702
100 : USD 22.9752
210 : USD 22.8452
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the S34ML16G202BHI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML16G202BHI000 and other electronic components in the NAND Flash category and beyond.

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S34ML16G2 16-Gbit, 4-Bit ECC, 8 I/O, 3 V V CC NAND Flash for Embedded General Description Cypress S34ML16G2 16-Gb NAND is offered in 3.3 V with 8 I/O interface. This document contains information for the CC S34ML16G2 device, which is a quad-die stack of four S34ML04G2 die. For detailed specifications, please refer to the discrete die data sheet: S34ML01G2 04G2. Distinctive Characteristics Density Security 16-Gb (4-Gb 4) One Time Programmable (OTP) area Serial number (unique ID) Architecture (For each 4-Gb device) Hardware program/erase disabled during power transition Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Additional Features Block Size: 64 Pages or (128k + 8k) bytes Supports Multiplane Program and Erase commands Plane Size Supports Copy Back Program 2048 Blocks per Plane or (256M + 16M) bytes Supports Multiplane Copy Back Program Device Size Supports Read Cache 2 Planes per Device or 512 Mbyte Electronic Signature NAND Flash Interface Manufacturer ID: 01h Open NAND Flash Interface (ONFI) 1.0 compliant Operating Temperature Address, Data and Commands multiplexed Industrial: 40 C to 85 C Supply Voltage 3.3 V device: Vcc = 2.7 V ~ 3.6 V Performance Page Read / Program Reliability Random access: 30 s (Max) 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 300 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase / Multiplane Erase 1000 Block Erase time: 3.5 ms (Typ) program-erase cycles with ECC Package Options Lead Free and Low Halogen 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1.2 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-98528 Rev. *E Revised May 05, 2017S34ML16G2 Contents General Description ............................................................. 1 7. Electrical Characteristics........................................... 12 7.1 Valid Blocks .................................................................. 12 Distinctive Characteristics .................................................. 1 7.2 DC Characteristics........................................................ 12 Performance.......................................................................... 1 7.3 Pin Capacitance............................................................ 12 7.4 Power Consumptions and Pin Capacitance 1. Connection Diagram.................................................... 3 for Allowed Stacking Configurations ............................. 13 2. Pin Description............................................................. 4 8. Physical Interface ....................................................... 14 3. Block Diagrams............................................................ 5 8.1 Physical Diagram.......................................................... 14 4. Addressing ................................................................... 7 9. Ordering Information.................................................. 16 5. Read Status Enhanced ................................................ 7 10. Document History....................................................... 17 6. Read ID.......................................................................... 8 6.1 Read Parameter Page ................................................... 9 Document Number: 001-98528 Rev. *E Page 2 of 18

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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