X-On Electronics has gained recognition as a prominent supplier of S34MS16G202BHI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34MS16G202BHI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34MS16G202BHI000 SkyHigh Memory

S34MS16G202BHI000 electronic component of SkyHigh Memory
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See Product Specifications
Part No.S34MS16G202BHI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash Nand
Datasheet: S34MS16G202BHI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 210
Multiples : 1
210 : USD 21.3195
250 : USD 19.4236
500 : USD 18.8417
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 30.4146
10 : USD 28.1308
25 : USD 26.7912
50 : USD 26.1324
100 : USD 24.0242
210 : USD 22.8055
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
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Cnhts
Hts Code
Mxhts
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We are delighted to provide the S34MS16G202BHI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34MS16G202BHI000 and other electronic components in the NAND Flash category and beyond.

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S34MS16G2 16 Gb, 4-Bit ECC, 8 I/O, and 1.8 V V CC NAND Flash for Embedded Distinctive Characteristics Performance Density Page Read / Program 16 Gb (4 Gb 4) Random access: 30 s (Max) Sequential access: 45 ns (Min) Architecture (For each 4 Gb device) Program time / Multiplane Program time: 300 s (Typ) Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Block Erase / Multiplane Erase Block Size: 64 Pages or (128k + 8k) bytes Block Erase time: 3.5 ms (Typ) Plane Size 2048 Blocks per Plane or (256M + 16M) bytes Reliability Device Size 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) 2 Planes per Device or 512 Mbyte 10 Year Data retention (Typ) NAND Flash Interface Blocks zero and one are valid and will be valid for at least Open NAND Flash Interface (ONFI) 1.0 compliant 1000 program-erase cycles with ECC Address, Data and Commands multiplexed Package Options Supply Voltage Lead Free and Low Halogen 1.8V device: V = 1.7V ~ 1.95V CC 63-Ball BGA 9 11 1.2 mm Security One Time Programmable (OTP) area Serial number (unique ID) Hardware program/erase disabled during power transition Additional Features Supports Multiplane Program and Erase commands Supports Copy Back Program Supports Multiplane Copy Back Program Supports Read Cache Electronic Signature Manufacturer ID: 01h Operating Temperature Industrial: 40C to 85C Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00464 Rev. *F Revised March 16, 2018S34MS16G2 Contents Distinctive Characteristics .................................................. 1 8.3 Pin Capacitance............................................................ 13 8.4 Power Consumptions and Pin Capacitance for Allowed Performance.......................................................................... 1 Stacking Configurations................................................ 13 1. General Description..................................................... 3 9. Physical Interface ....................................................... 14 2. Connection Diagram.................................................... 3 9.1 63-Ball BGA Package ................................................... 14 3. Pin Description............................................................. 4 10. Ordering Information.................................................. 15 4. Block Diagrams............................................................ 5 11. Revision History.......................................................... 16 Document History Page ......................................................16 5. Addressing ................................................................... 7 Sales, Solutions, and Legal Information ...........................17 6. Read Status Enhanced ................................................ 7 Worldwide Sales and Design Support ....................... 17 Products .................................................................... 17 7. Read ID.......................................................................... 7 PSoC Solutions ...................................................... 17 7.1 Read Parameter Page ................................................... 9 Cypress Developer Community ................................. 17 8. Electrical Characteristics.......................................... 12 Technical Support ..................................................... 17 8.1 Valid Blocks ................................................................. 12 8.2 DC Characteristics....................................................... 12 Document Number: 002-00464 Rev. *F Page 2 of 17

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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