DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction The choice of N- and P-type silicon allows the designer to Description optimize the silicon material for the intended application: Skyworks beam-lead and chip Schottky barrier detector diodes Doppler mixers and high-sensitivity detectors benefit from using are designed for applications through 40 GHz in the Ka band. the low noise characteristics of the P-type silicon. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and Low conversion loss mixers and biased detectors can be choice of materials result in low series resistance along with a designed using standard N-type material. narrow spread of capacitance values for close impedance control. P-type silicon is used to obtain superior 1/f noise characteristics. Applications N-type silicon is also available. These diodes are categorized by tangential signal sensitivity (TSS) Beam-lead and chip diodes can be mounted on special customer for detector applications in four frequency ranges: S, X, Ku, and substrates. Ka bands. However, they can also be used as modulators, high- Unmounted beam-lead diodes are especially well suited for use in speed switches, and low-power limiters. microwave integrated circuit (MIC) applications. Mounted beam- TSS is a parameter that describes a diodes detector sensitivity. It lead diodes can be easily used in MIC, stripline, or other such is defined as the amount of signal power, below a one-milliwatt circuitry. reference level, required to produce an output pulse with an These universal chips are designed for a high degree of device amplitude sufficient to raise the noise fluctuations by an amount reliability in both commercial and industrial uses. The offset bond equal to the average noise level. TSS is approximately 4 dB above pad assures that no mechanical damage occurs at the junction the minimum detectable signal. during the wire bonding. Additionally, the 4 mil bond pad The P-type Schottky diodes in this Data Sheet are optimized for eliminates performance variation due to bonding, improves low noise in the 1/f region. They require a small forward bias (to efficiency during manual operations, and is ideal for automated reduce video resistance) if efficient operation is required. The bias assembly. not only increases sensitivity but also reduces parameter variation Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 200847K Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice June 3, 2019 1 SILICON SCHOTTKY BARRIER DIODES due to temperature change. Video impedance is a direct function Additional bonding and handling methods are contained in the of bias and follows the 26/l (mA) relationship. This is important to Skyworks Application Notes, Waffle Pack Chip Carrier pulse fidelity, since the video impedance together with the Handling/Opening Procedure (document 200146) and Diode detector output capacitance affects the effective amplifier Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and bandwidth. Packaging (document 200532). Bias does, however, increase typical noise, particularly in the 1/f region. Therefore, it should be kept as low as possible (typically 5 Electrical and Mechanical Specifications to 50 A). Electrical and physical specifications for the silicon Schottky barrier diodes are provided in Tables 1 through 3. SPICE model parameters are defined in Table 4. Typical performance characteristics are shown in Figures 1 through 4. Typical video detector circuits are shown in Figure 5. 1 Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes Electrical Characteristics TSS RV CJ 0 V Test 2 (dBm) () (pF) Frequency VF 1 mA VB 10 A Frequency Outline Band Part Number Typ Min Max Max (mV) (V) (GHz) Drawing X DDB2503-000 -50 500 700 0.15 200-350 2 10.00 491-006 Ku DDB2504-000 -48 500 700 0.10 200-350 2 16.00 491-006 3 3 3 K DDB2265-000 -50 800 1200 0.10 300-450 3 24.15 491-006 1 Performance is guaranteed only under the conditions listed in this table. 2 Bias = 50 A Video bandwidth = 10 MHz. 3 Bias = 30 A Table 2. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips Electrical Characteristics RV TSS CJ 0 V RT 10 mA VB 10 A 1 2 () (dBm) (pF) () (V) Frequency VF 1 mA Outline Band Part Number Barrier Typ Min Max (mV) Max Min Drawing Ku CDB7620-000 Low 537 -40 0.15 250-350 30 2 571-006 3 K CDB7619-000 Low 735 -50 0.10 275-375 40 3 571-006 1 Bias = 50 A Video bandwidth = 10 MHz RV = 2800 2 Rt is the slope resistance 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt 2.8. 3 Bias = 30 A Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 June 3, 2019 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 200847K