DATA SHEET DSM8100-000: Mesa Beam-Lead PIN Diode Applications: Designed for switching applications Features Low capacitance Low resistance Fast switching Oxide-nitride passivated Durable construction Lead (Pb)-free, RoHS-compliant, and Green Absolute Maximum Ratings Description Characteristic Value Skyworks Silicon Mesa Beam-Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that Operating temperature -65 C to +150 C surpasses the standard beam-lead PINs. The DSM8100-000 is Storage temperature -65 C to +200 C designed for low resistance, low capacitance and fast switching Power dissipation (derate 250 mW time. The oxide-nitride passivation layers provide reliable opera- linearly to zero 175 C) tion and stable junction parameters that provide complete sealing Typical lead strength 8 grams pull of the junction permitting use in assemblies with some degree of Reverse voltage 60 V moisture sealing. A layer of glass provides increased mechanical Performance is guaranteed only under the conditions listed in the specifications table and is strength. not guaranteed under the full range(s) described by the Absolute Maximum Ratings. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the The DSM8100 is designed for microstrip or stripline circuits and device and will void the warranty. for circuits requiring high isolation from a series-mounted diode such as broadband multithrow switches, phase shifters, limiters, CAUTION: Although these devices are designed to be robust, ESD attenuators and modulators. (Electrostatic Discharge) can cause permanent damage. Static charges may easily produce potentials of several NEW Skyworks Green products are RoHS (Restriction kilovolts on the human body or equipment, which can of Hazardous Substances)-compliant, conform to discharge without detection. Industry-standard ESD the EIA/EICTA/JEITA Joint Industry Guide (JIG) precautions must be employed at all times. Level A guidelines, are halogen free according to IEC-61249-2-21, and contain <1,000 ppm antimony trioxide in polymeric materials. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 200096 Rev. E Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice. August 14, 2008 1Insertion Loss (dB) DATA SHEET DSM8100-000 Mesa Beam-Lead Diode Specifications Min. Max. Total Capacitance Max. Series Resistance Typ. T L (1) Voltage Rating 10 V, 1 MHz 10 mA,100 MHz I = 10 mA Outline F Part Number (V) (pF) ( ) (ns) Drawing DSM8100-000 60 0.025 3.5 25 389-003 1. Reverse current is specified at 10 A maximum at the voltage rating. This voltage should not be exceeded. Typical Performance Data 45 40 35 5 30 25 20 15 10 10 5 0 0.75 0.60 (10 mA) 15 0.45 0.30 0.15 20 0 0.3 1 3 10 30 100 300 0 5 10 15 18 20 25 30 Time (ns) Frequency (GHz) Switching Time Data Typical Isolation and Insertion Loss Characteristics 100 0.06 1 MHz 0.05 10 0.04 0.03 1 0.02 Above 1 GHz 0.01 0.1 0 0.1 1 10 100 0 10 20 30 Forward Bias Current (mA) Reverse Voltage (V) Typical RF Resistance vs. Forward Bias Current Typical Capacitance vs. Reverse Voltage Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 August 14, 2008 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice. 200096 Rev. E Capacitance (pF) Attenuation (dB) RF Resistance ( ) Isolation (dB)