OLS249 Skyworks

DATA SHEET OLS249: Radiation-Tolerant Phototransistor Hermetic Surface-Mount Optocoupler Features Anode Base Hermetic SMT package 1500 VDC electrical isolation High CTR Collector Small package size High reliability and rugged construction High-reliability screening available Cathode Emitter Radiation tolerant 202682-001 Figure 1. OLS249 Block Diagram Description The OLS249 consists of an LED that is optically coupled to an Figure 1 shows the OLS249 functional block diagram. Table 1 N-P-N silicon phototransistor, which is mounted and coupled in a provides the OLS249 absolute maximum ratings. Table 2 provides custom hermetic surface-mount technology (SMT) leadless chip the OLS249 electrical specifications. carrier (LCC) package. Figures 2 through 4 illustrate the OLS249 typical performance The low input current makes the OLS249 well-suited for direct characteristics. Figure 5 shows the OLS249 switching test circuit. Complementary Metal Oxide Semiconductor (CMOS) to Low Figure 6 provides the OLS249 package dimensions. Power Schottky Transistor-Transistor Logic (LSTTL)/Transistor-to- Transistor Logic (TTL) interfaces. Electrical parameters are similar to the JEDEC registered 4N49 optocoupler, but with better current transfer ratio (CTR) degradation characteristics due to radiation exposure. Special electrical parametric selections are available upon request. Phone 408 946-1968 Fax 408 946-1960 hirel.sales skyworksinc.com www.skyworksinc.com 202682E Isolink Proprietary Information Products and Product Information are Subject to Change Without Notice April 13, 2017 1 DATA SHEET OLS249: RADIATION-TOLERANT PHOTOTRANSISTOR HERMETIC SURFACE-MOUNT OPTOCOUPLER 1 Table 1. OLS249 Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Coupled 2 Input to output isolation voltage VDC 1500 +1500 V Storage temperature range TSTG 65 +150 C Operating temperature range TA 55 +125 C Mounting temperature range (10 seconds maximum) TMTG +240 C Input Diode 3 Average input current IDD 40 mA 4 Peak forward current IF 1 A Reverse voltage VR 2 V Output Detector Collector to emitter voltage VCE 40 V Emitter to base voltage VEB 7 V Collector to base voltage VCB 45 V Continuous collector current ICC 50 mA 5 Power dissipation PD 300 mW 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to the device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. 2 Measured between pins 1, 2, and 6 shorted together, and pins 3, 4, and 5 shorted together. TA = 25C and duration = 1 s. 3 Derate linearly to 125 C free-air temperature at 0.67 mA/C above 65 C. 4 For pulse width 1 s, pulse repetition rate 300 pps. 5 Derate linearly to 125 C free-air temperature at 3.0 mW/C above 25 C. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. Phone 408 946-1968 Fax 408 946-1960 hirel.sales skyworksinc.com www.skyworksinc.com 2 April 13, 2017 Isolink Proprietary Information Products and Product Information are Subject to Change Without Notice 202682E