BSS138 October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. R = 3.5 V = 10 V DS(ON) GS transistors are produced using Fairchilds proprietary, R = 6.0 V = 4.5 V high cell density, DMOS technology. These products DS(ON) GS have been designed to minimize on-state resistance High density cell design for extremely low R DS(ON) while provide rugged, reliable, and fast switching performance.These products are particularly suited for Rugged and Reliable low voltage, low current applications such as small Compact industry standard SOT-23 surface mount servo motor control, power MOSFET gate drivers, and package other switching applications. D D S G S G SOT-23 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 50 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 0.22 A D Pulsed 0.88 Maximum Power Dissipation (Note 1) 0.36 P W D mW/C Derate Above 25C 2.8 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Maximum Lead Temperature for Soldering T 300 C L Purposes, 1/16 from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1) 350 R C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS138 7 8mm 3000 units BSS138 Rev C(W) 2005 Fairchild Semiconductor Corporation BSS138 Electrical Characteristics T = 25C unless otherwise noted A Symbol Parameter Test Conditions Min TypMax Units Off Characteristics BV DrainSource Breakdown Voltage V = 0 V, I = 250 A 50 V DSS GS D BVDSS Breakdown Voltage Temperature I = 250 A,Referenced to 25C mV/C D 72 Coefficient T J I Zero Gate Voltage Drain Current V = 50 V, V = 0 V 0.5 DSS DS GS A V = 50 V, V = 0 V T = 125C 5 A DS GS J V = 30 V, V = 0 V 100 nA DS GS I GateBody Leakage. nA GSS V = 20 V, V = 0 V 100 GS DS On Characteristics (Note 2) V Gate Threshold Voltage V = V , I = 1 mA 0.8 1.3 1.5 V GS(th) DS GS D VGS(th) Gate Threshold Voltage 2 I = 1 mA,Referenced to 25C mV/C D T Temperature Coefficient J R Static DrainSource V = 10 V, I = 0.22 A 0.7 3.5 DS(on) GS D OnResistance V = 4.5 V, I = 0.22 A 1.0 6.0 GS D V = 10 V, I = 0.22 A, T = 125C GS D J 1.1 5.8 I OnState Drain Current V = 10 V, V = 5 V 0.2 A D(on) GS DS g Forward Transconductance V = 10V, I = 0.22 A 0.12 0.5 S FS DS D Dynamic Characteristics C Input Capacitance 27 pF iss V = 25 V, V = 0 V, DS GS C Output Capacitance f = 1.0 MHz 13 pF oss C Reverse Transfer Capacitance 6 pF rss R Gate Resistance V = 15 mV, f = 1.0 MHz 9 G GS Switching Characteristics (Note 2) t TurnOn Delay Time 2.5 5 ns d(on) VDD = 30 V, ID = 0.29 A, V = 10 V, R = 6 GS GEN t TurnOn Rise Time 9 18 ns r t TurnOff Delay Time 20 36 ns d(off) t TurnOff Fall Time 7 14 ns f Q Total Gate Charge V 1.7 2.4 nC g DS = 25 V, ID = 0.22 A, V = 10 V GS Q GateSource Charge 0.1 nC gs Q GateDrain Charge 0.4 nC gd DrainSource Diode Characteristics and Maximum Ratings I Maximum Continuous DrainSource Diode Forward Current 0.22 A S V DrainSource Diode Forward V = 0 V, I = 0.44 A(Note 2) 0.8 1.4 V SD GS S Voltage Notes: 1. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. R is guaranteed by design while R is determined by the user s board design. JC CA a) 350C/W when mounted on a minimum pad.. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% BSS138 Rev C(W)