QRE1113, QRE1113GR, QRE1114GR Miniature Reflective Object Sensor Features www.onsemi.com Phototransistor Output No Contact Surface Sensing Miniature Package Lead Form Style: Gull Wing Pin 1: Anode Pin 2: Cathode Two Leadform Options: Pin 3: Collector Through Hole (QRE1113) Pin 4: Emitter SMT Gull Wing (QRE1113GR & QRE1114GR) Two Packaging Options: 12 3 4 Tube (QRE1113) Tape and Reel (QRE1113GR & QRE1114GR) MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Value Unit T Operating Temperature 40 to +85 C OPR REFLECTIVE RECTANGULAR SURFACE MOUNT CASE 100CY T Storage Temperature 40 to +90 C STG T Soldering Temperature (Iron) 240 for 5 s C SOL I (Notes 2, 3, 4) T Soldering Temperature (Flow) 260 for 10 s C SOL F (Notes 3, 4) EMITTER I Continuous Forward Current 50 mA F V Reverse Voltage 5 V R I Peak Forward Current (Note 5) 1 A FP P Power Dissipation (Note 1) 75 mW D REFLECTIVE RECTANGULAR THROUGH HOLE CASE 100AQ SENSOR V Collector-Emitter Voltage 30 V CEO V Emitter-Collector Voltage 5 V ECO ORDERING INFORMATION I Collector Current 20 mA C Device Package Shipping P Power Dissipation (Note 1) 50 mW D QRE1113 Reflective 1600 / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Rectangular assumed, damage may occur and reliability may be affected. (Through Hole) 1. Derate power dissipation linearly 1.00 mW/C above 25C. QRE1113GR Reflective 1000 / 2. RMA flux is recommended. & 3. Methanol or isopropyl alcohols are recommended as cleaning agents. Rectangular Tape & Reel QRE1114GR 4. Soldering iron 1/16 (1.6 mm) from housing. (Surface Mount) 5. Pulse conditions: tp = 100 s T = 10 ms. For information on tape and reel specifications, in- cluding part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications This document, and the information contained herein, is CONFIDENTIAL AND Brochure, BRD8011/D. PROPRIETARY and the property of Semiconductor Components Industries, LLC., dba ON Semiconductor. It shall not be used, published, disclosed or disseminated outside of the Company, in whole or in part, without the written permission of ON Semiconductor. Reverse engineering of any or all of the information contained herein is strictly prohibited. 2020, SCILLC. All Rights Reserved. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: February, 2020 Rev. 7 QRE1113/DQRE1113, QRE1113GR, QRE1114GR ELECTRICAL/OPTICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit INPUT DIODE V Forward Voltage I = 20 mA 1.2 1.6 V F F l Reverse Leakage Current V = 5 V 10 A R R Peak Emission I = 20 mA 940 nm F PE Wavelength OUTPUT TRANSISTOR l Collector-Emitter Dark I = 0 mA, V = 20 V 100 nA D F CE Current COUPLED l On-State Collector I = 20 mA, V = 5 V QRE1113 & QRE1113GR 0.10 0.90 mA C(ON) F CE Current (Note 6) QRE1114GR 0.30 0.60 mA I Cross-Talk Collector I = 20 mA, V = 5 V (Note 7) 1 A CX F CE Current V Saturation Voltage I = 20 mA, I = 50 A (Note 6) 0.3 V CE(SAT) F C t Rise Time V = 5 V, l = 100 A, R = 1 k 20 s r CC C(ON) L t Fall Time 20 s f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Measured using an aluminum alloy mirror at d = 1 mm. 7. No reflective surface at close proximity. REFLOW PROFILE 260C max. for 10 sec. max. 1C to 5C/sec 260C 220C Preheating 180C to 200C 60 sec. max. 1C to 5C/sec above 220C 120 sec. max. Time (seconds) Figure 1. Reflow Profile www.onsemi.com 2 Temperature ( C)