X-On Electronics has gained recognition as a prominent supplier of SPT40N120T1B1T8TL IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SPT40N120T1B1T8TL IGBT Transistors are a product manufactured by SPS. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SPT40N120T1B1T8TL SPS

SPT40N120T1B1T8TL electronic component of SPS

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Part No.	SPT40N120T1B1T8TL
Manufacturer:	SPS
Category:	IGBT Transistors
Description:	416W 80A 1.2kV Trench Field Stop TO-247-3 IGBTs ROHS
Datasheet:	SPT40N120T1B1T8TL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.7778 ea
Line Total: USD 6.78

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

SPT40N120T1B1T8TL More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 19 Mar to Mon. 24 Mar MOQ : 1 Multiples : 1	1 : USD 6.7778 10 : USD 6.007 30 : USD 5.0356 90 : USD 4.6425

Specifications

Manufacturer SPS SPS
Product Category IGBT Transistors IGBT Transistors
Category IGBT Transistors IGBT Transistors
Rohs y y
Package TO - 247 TO - 247
Brand Category Sps Sps
Turn Off Delay Time Tdoff 230ns 230ns
Power Dissipation Pd 416 W 416 W
Operating Temperature - 40 C ~ + 150 C @ (Tj) - 40 C ~ + 150 C @ (Tj)
Turn On Delay Time Tdon 55ns 55ns
Collector Current Ic 80 A 80 A
Collector-Emitter Breakdown Voltage Vces 1.2 kV 1.2 kV
Type Trench Field Stop Trench Field Stop
Gate-Emitter Threshold Voltage Vgeth@Ic 5.8 V @250uA 5.8 V @250uA
Total Gate Charge Qg@Ic Vge 270 nC @40A , 15V 270 nC @40A , 15V
Collector-Emitter Saturation Voltage Vcesat@Ic Vge 1.7 V @40A , 15 V 1.7 V @40A , 15 V
Diode Reverse Recovery Time Trr 190ns 190ns
Turn Off Switching Loss Eoff 1.5mJ 1.5mJ
Turn On Switching Loss Eon 2.4mJ 2.4mJ
Collector Cut-Off Current Ices@Vce 10 uA @1.2kV 10 uA @1.2kV
Input Capacitance Cies@Vce 4.4 nF @25V 4.4 nF @25V
Diode Forward Voltage Vf@If 3.5 V @40A 3.5 V @40A
Pulsed Collector Current Icm 160 A 160 A

We are delighted to provide the SPT40N120T1B1T8TL from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SPT40N120T1B1T8TL and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The SPT40N120T1B1T8TL is an electronic part manufactured by SPS, and it is an Insulated Gate Bipolar Transistor (IGBTs) with a TO-247-3 package type and a trench field stop structure. It has a 416W power dissipation rating and an 80A drain current rating at 1.2kV voltage. It complies with the RoHS standards. The TO-247-3 package is suitable for high power applications with improved thermal and electrical performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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