BTA12-700SWRG STMicroelectronics

BTA12, BTB12, T12xx 12 A Snubberless, logic level and standard triacs Features A2 Medium current triac G Low thermal resistance with clip bonding A1 Low thermal resistance insulation ceramic for A2 insulated BTA A2 High commutation (4Q) or very high A1 commutation (3Q) capability A2 G A1 A2 BTA series UL1557 certified (File ref: 81734) G 2 2 I PAK D PAK Packages are RoHS ( 2002/95/EC) compliant (T12-R) (T12-G) A2 Applications ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance A1 A1 A2 A2 motors speed controllers. G G TO-220AB Insulated TO-220AB The snubberless versions (BTA/BTB...W and T12 (BTA12) (BTB12) series) are especially recommended for use on inductive loads, because of their high commutation performances. The BTA series Order code provides an insulated tab (rated at 2500 V RMS). See Ordering information on page 11 Description Available either in through-hole or surface-mount packages, the BTA12, BTB12 and T12xx triac series is suitable for general purpose mains power AC switching. Table 1. Device summary (1) Symbol Parameter T12xx BTA12 BTB12 I RMS on-state current 12 12 12 T(RMS) V /V Repetitive peak off-state voltage 600/800 600/800 600/800 DRM RRM I (Snubberless) Triggering gate current 10/35/50 5/10/35/50 5/10/35/50 GT I (Standard) Triggering gate current - 35/50 35/50 GT 1. Insulated TM: Snubberless is a trademark of STMicroelectronics September 2007 Rev 9 1/12 www.st.com 12Characteristics BTA12, BTB12, T12xx 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit 2 2 I PAK / D PAK / T = 105 C RMS on-state current c TO-220AB I 12 A T(RMS) (full sine wave) TO-220AB Ins. T = 90 C c F = 50 Hz t = 20 ms 120 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 126 2 2 ItI t Value for fusing t = 10 ms 78 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r Non repetitive surge peak off-state V /V DRM RRM V /V t = 10 ms T = 25 C V DSM RSM p j voltage + 100 I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 3. Electrical characteristics (T = 25C, unless otherwise specified) j Snubberless and logic level (3 quadrants) T12xx BTA12 / BTB12 Symbol Test conditions Quadrant Unit T1210 T1235 T1250 TW SW CW BW (1) I I - II - III MAX. 10 35 50 5 10 35 50 mA GT V = 12 V D R = 30 L V I - II - III MAX. 1.3 V GT V = V D DRM V R = 3.3 k I - II - III MIN. 0.2 V GD L T = 125 C j (2) I I = 100 mA MAX. 15 35 50 10 15 35 50 mA H T I - III 25 50 70 10 25 50 70 I I = 1.2 I MAX. mA L G GT II 30 60 80 15 30 60 80 V = 67 %V gate open (2) D DRM dV/dt MIN. 40 500 1000 20 40 500 1000 V/s T = 125 C j (dV/dt)c = 0.1 V/s 6.5 3.5 6.5 T = 125 C j (dV/dt)c = 10 V/s (2) (dI/dt)c MIN. 2.9 1 2.9 A/ms T = 125 C j Without snubber 6.5 12 6.5 12 T = 125 C j 1. Minimum I is guaranted at 5% of I max GT GT 2. for both polarities of A2 referenced to A1 2/12