BTB06-800TWRG STMicroelectronics

BTA06 and BTB06 Series 6A TRIACS SNUBBERLESS, LOGIC LEVEL & STANDARD Table 1: Main Features A2 Symbol Value Unit I 6A T(RMS) G A1 V /V 600 and 800 V DRM RRM I 5 to 50 mA GT (Q ) 1 A2 DESCRIPTION Available either in through-hole or surface-mount A1 packages, the BTA06 and BTB06 triac series is A1 A2 A2 G G suitable for general purpose AC switching. They can be used as an ON/OFF function in applica- TO-220AB Insulated TO-220AB tions such as static relays, heating regulation, in- (BTA06) (BTB06) duction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... Table 2: Order Codes The snubberless and logic level versions (BTA/ Part Number Marking BTB...W) are specially recommended for use on BTA06-xxxxxRG See page table 8 on inductive loads, thanks to their high commutation BTB06-xxxxxRG page 6 performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V ) complying with UL standards (File ref.: RMS E81734). Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit T = 110C TO-220AB c RMS on-state current (full sine I 6A T(RMS) wave) T = 105C TO-220AB Ins. c F = 50 Hz t = 20 ms 60 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25C) j F = 60 Hz t = 16.7 ms 63 t = 10 ms 21 ItI t Value for fusing A s p Critical rate of rise of on-state cur- T = 125C dI/dt F = 120 Hz 50 A/s j rent I = 2 x I , t 100 ns G GT r I t = 20 s T = 125C Peak gate current 4A GM p j P T = 125C Average gate power dissipation 1W G(AV) j T - 40 to + 150 stg Storage junction temperature range C Operating junction temperature range T - 40 to + 125 j February 2006 REV. 6 1/7BTA06 and BTB06 Series Tables 4: Electrical Characteristics (T = 25C, unless otherwise specified) j SNUBBERLESS and Logic Level (3 quadrants) BTA06 / BTB06 Symbol Test Conditions Quadrant Unit TW SW CW BW I (1) I - II - III MAX. 5 10 35 50 mA GT V = 12 V R = 30 D L V I - II - III MAX. 1.3 V GT V = V R = 3.3 k D DRM L V I - II - III MIN. 0.2 V GD T = 125C j I (2) I = 100 mA MAX. 10 15 35 50 mA H T I - III 10 25 50 70 I I = 1.2 I MAX. mA L G GT II 15 30 60 80 V = 67 %V gate open T = 125C dV/dt (2) MIN. 20 40 400 1000 V/s D DRM j (dV/dt)c = 0.1 V/s T = 125C 2.7 3.5 - - j (dV/dt)c = 10 V/s T = 125C (dI/dt)c (2) MIN. 1.2 2.4 - - A/ms j Without snubber T = 125C -- 3.5 5.3 j Standard (4 quadrants) BTA06 / BTB06 Symbol Test Conditions Quadrant Unit CB I - II - III 25 50 I (1) MAX. mA GT IV 50 100 V = 12 V R = 30 D L V ALL MAX. 1.3 V GT V V = V R = 3.3 k T = 125C ALL MIN. 0.2 V GD D DRM L j I (2) I = 500 mA MAX. 25 50 mA H T I - III - IV 40 50 I I = 1.2 I MAX. mA L G GT II 80 100 V = 67 %V gate open T = 125C dV/dt (2) MIN. 200 400 V/s D DRM j (dI/dt)c = 2.7 A/ms T = 125C (dV/dt)c (2) MIN. 5 10 V/s j Table 5: Static Characteristics Symbol Test Conditions Value Unit V (2) I = 8.5 A t = 380 s T = 25C MAX. 1.55 V TM TM p j V (2) T = 125C Threshold voltage MAX. 0.85 V t0 j R (2) T = 125C Dynamic resistance MAX. 60 m d j T = 25C 5A I j DRM V = V MAX. DRM RRM I T = 125C RRM 1mA j Note 1: minimum I is guaranted at 5% of I max. GT GT Note 2: for both polarities of A2 referenced to A1. 2/7