DSL03 Low capacitance TVS for high speed lines such as xDSL Datasheet - production data Description DSL03 is designed to protect DSL line drivers against surges defined in worldwide telecommunication standards. This device protects line drivers of various systems such as ADSL and VDSL. The low capacitance makes it suitable from ADSL to VDSL2 data rates. DSL03 is able to survive severe conditions even 627 / when used with downgraded or oscillating gas tube. DSL03 is also suitable to be used on other lines Features when IEC61000-4-5 surge capability is required. High surge capability to comply with DSL03 is packaged in a SOT23-6L. GR-1089 and ITU-T K20/21 Figure 1. Functional diagram Keeps its peak power capability up to T max j Voltages: 10, 22 and 24 V Low capacitance device: C = 0.5 pF typ RoHS package Low leakage current: 0.2 A at 25 C / Complies with the following standards / / Telcordia GR-1089 2.5 kV 2/10 s - 500 A 2/10 s / AC power fault tests ITU-T K20/21/45 6 kV 10/700 s - 150 A 5/310 s power induction tests power contact tests IEC 61000-4-2, level 4 15 kV (air discharge) 8 kV (contact discharge IEC 61000-4-5, level 2 1 kV, 42 MIL STD 883G-Method 3015-7: Class 3 8 kV (human body model) February 2015 DocID022325 Rev 2 1/7 This is information on a product in full production. www.st.com 2 , 9 9 9 2 , 9Characteristics DSL03 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit V Peak pulse voltage IEC 61000-4-5 contact discharge 30 kV pp I Peak pulse current 8/20s 16 A pp T Storage temperature range -55 to 150 C stg C T Operating junction temperature range -40 to 125 j T Maximum temperature for soldering during 10s 260 C L Table 2. Electrical characteristics (T = 25 C) amb V I CL PP I V V I C C C RM RM BR BR 8/20 s I/O to I/O I/O to I/O I/O to I/O I/O to I/O I/O to I/O I/O to I/O Order code (1) (1) (2) Max. Min Max. typ. max. typ. V mA A A V V pF pF pF DSL03-010SC6 0.2 10 10.5 1 29 16 0.5 3 0.2 DSL03-022SC6 0.2 22 25 1 52 16 0.5 3 0.2 DSL03-024SC6 0.2 24 28 1 55 16 0.5 3 0.2 1. Test conditions: V = 2 V bias, V = 1 V, F = 1 MHz R RMS 2. Measured between 1 V and V RM Figure 2. Peak pulse power dissipation versus Figure 3. Leakage current versus junction initial junction temperature (typical values, temperature (typical values) 8/20s) Ppp (W) 1000 (nA) 8/20 s 1.E+03 900 V =V R RM 800 700 1.E+02 600 500 400 1.E+01 300 200 100 T (C) j T (C) j 1.E+00 0 25 50 75 100 125 0 25 50 75 100 125 150 2/7 DocID022325 Rev 2