ESD051-1F4 Datasheet Low clamping single line unidirectional ESD Features Low clamping voltage: -3 V / +9 V (IEC 61000-4-2 contact discharge at 30 ns) Unidirectional diode Low leakage current ST0201 package Complies with the following standards: IEC 61000-4-2 level 4 (exceeds level 4) ST0201 package 30 kV (air discharge) 30 kV (contact discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet, PC, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems Description Product status link The ESD051-1F4 is a unidirectional single line TVS diode designed to protect the ESD051-1F4 power line against EOS and ESD transients. The device is ideal for applications where board space saving is required. DS12619 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.ESD051-1F4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 30 V Peak pulse voltage kV pp IEC 61000-4-2 air discharge 30 P Peak pulse power (8/20 s) 110 W pp I Peak pulse current (8/20 s) 11 A pp T Operating junction temperature range -55 to 150 op T Storage junction temperature range -65 to 150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) Unidirectional device V Stand-off voltage RM I PP V Breakdown voltage at I BR R V Clamping voltage CL I Leakage current at V I RM RM R I I Peak pulse current RM PP V Forward voltage drop V F V V V V RM BR CL F R Dynamic resistance d I I F V I Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Reverse working voltage 5.5 V RM V Breakdown voltage I = 1 mA 5.8 V BR R I Leakage current V = 5.5 V 100 nA RM RM IEC 61000-4-2, +8 kV 9.0 contact measured at 30 ns V Clamping voltage V CL IEC 61000-4-2, -8 kV -3.0 contact measured at 30 ns Dynamic resistance, pulse Direct 0.17 R D duration 100 ns Forward 0.14 (1) C V = 0 V, F = 1 MHz, V = 30 mV Line capacitance 110 pF LINE LINE OSC 1. More information are available in ST application note: AN4022 DS12619 - Rev 2 page 2/10